SI7846DP-T1-E3

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The SI7846DP-T1-E3 is a single N-Channel MOSFET that provides efficient power switching for a wide range of applications. The device features low on-state resistance (RDS(on)) and fast switching speeds, making it suitable for a broad range of applications, such as in automotive and industrial applications. The device is constructed using advanced process technology to offer superior performance, offering a reduced power loss, protection against voltage surges, and fast switching times.

Working Principle

The SI7846DP-T1-E3 is an N-Channel MOSFET with a level port, meaning it is designed to be operated by the voltage level between itself and the gate. When the gate voltage rises above the threshold voltage (Vth), the MOSFET switches off, allowing current to flow between the drain and source. When the gate voltage decreases below the threshold voltage, the source and drain become connected, preventing current from flowing. The MOSFET is intended for use in circuits with a wide range of voltage levels, from standard circuitry to complex industrial and automotive applications. supply voltage ranging from 4.5V to 28V.

Applications

The SI7846DP-T1-E3 is designed for use in a variety of applications, and can be used in both automotive and industrial applications. Its fast switching speeds and low on-state resistance make it an ideal choice for use in high-power switching applications, such as automotive engine control and motor control. Its low on-state resistance also makes it a suitable device for use in power supply designs, where it can offer improved efficiency, due to its low switching losses. It can also be used as an on/off switch for circuits that require high current capabilities, as it can handle high supply voltages and currents.

The SI7846DP-T1-E3 is also suitable for use in low frequency switching applications, such as in audio amplifier, power factor correction and power management. systems. Its low input capacitance and low output capacitance make it an ideal choice for use in low frequency switching circuits, where fast switching speeds are not required.

Overall, the SI7846DP-T1-E3 is an ideal choice for a wide range of applications. Its low on-state resistance and fast switching speeds make it an ideal choice for high-power switching applications, while its low input and output capacitance make it suitable for low frequency switching applications. Its versatility makes it a suitable choice for a wide range of applications.

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