Allicdata Part #: | SI7856ADP-T1-GE3-ND |
Manufacturer Part#: |
SI7856ADP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 15A PPAK SO-8 |
More Detail: | N-Channel 30V 15A (Ta) 1.9W (Ta) Surface Mount Pow... |
DataSheet: | SI7856ADP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.9W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI7856ADP-T1-GE3 is an advanced logic-level N-Channel MOSFET that functions as an electronic switch. It is a single component that is commonly used in electronics, DC/DC converters, RF switching, and other applications requiring a specifically designed N-Channel MOSFET. This component is particularly useful when it comes to its low-noise behavior, high switching speed, and low gate-threshold voltage. In this article, we will discuss the application field and working principle of the SI7856ADP-T1-GE3.
Application Field
The SI7856ADP-T1-GE3 is ideal for various low-voltage, low-power applications. It is most commonly used in Arduino, Raspberry Pi, and other Hobbyist-level applications requiring an electronic switch, such as controlling motors, LEDs, and other devices. Moreover, this component has high switching speed, which makes it suitable for high-frequency switching applications, such as radio/TV receivers, modulators, and communication systems. Furthermore, it is also suitable for switching applications that require a high level of efficiency and low power consumption, such as DC/DC converters and power regulators.
Working Principle
The SI7856ADP-T1-GE3 is a single component that functioning as an electronic switch, making it much easier to control motors, LEDs, and other devices. The working principle of this component is based on the flow of electron charge between its electrodes. In a MOSFET, the gate electrode is the most important and requires a relatively low voltage to turn the device on. When the gate is energized, it creates a region between the source and drain that allows electrons to flow through the device, which in turn is responsible for turning the device on. In addition, the voltage on the gate determines the amount of current flow, which is essential for applications that require precise control.
The SI7856ADP-T1-GE3 also has a low RDS(on) resistance that significantly lowers power consumption. This component has an RDS(on)value of 0.35 ohm, which makes it ideal for applications that require high levels of efficiency. Moreover, this component has an exceptionally low gate-threshold voltage, which enables the user to turn it on and off with a relatively low voltage. The low gate-threshold voltage also makes it possible to control the device at very high speeds.
To sum up, the SI7856ADP-T1-GE3 is a versatile, low-voltage logic-level N-Channel MOSFET that is ideal for a variety of applications. With its low-noise behavior, high switching speed, and low gate-threshold voltage, this component is suitable for a wide range of applications, ranging from hobby electronics to high-frequency switching. It has an RDS(on) value of 0.35 ohm, making it ideal for applications requiring high efficiency and low power consumption. Overall, the SI7856ADP-T1-GE3 is an ideal component for a wide range of low-voltage, low-power applications.
The specific data is subject to PDF, and the above content is for reference
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