SI7880ADP-T1-E3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5.4W (Ta), 83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5600pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	125nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	3 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	40A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SI7880ADP-T1-E3 is an MOSFET (metal-oxide-semiconductor field-effect transistor) that is capable of providing up to 2.4A of current for a variety of applications. This versatile device is available in both leaded and surface mount form, making it suitable for a wide range of projects. While the SI7880ADP-T1-E3 can be used in a variety of applications, it is best suited for those that require high-current switching, such as switchmode power supplies, motor controllers, and high voltage AC/DC converters.In order to understand how the SI7880ADP-T1-E3 works, it\'s important to understand the basics of MOSFETs in general. MOSFETs are solid-state switches that control the flow of electric current through the device by varying the electric field. The MOSFET consists of three parts: the source, the drain, and the gate. The source and the drain are two terminals of the device to which voltage is applied. The gate, on the other hand, is used to control the flow of current between the source and the drain.In the case of the SI7880ADP-T1-E3, the gate is connected to a special gate driver circuit which amplifies the gate signals, allowing for extremely fast switching speeds. When a voltage is applied to the gate of the MOSFET, it will create an electric field that will cause holes or electrons to move from one side of the device to the other. This movement of electrons creates an electrical current, allowing current to flow from the source to drain.To build a switchmode power supply for example, one would simply use their SI7880ADP-T1-E3 and connect it between their input voltage source and their output device. When the voltage at the gate of the MOSFET is raised, the electric field will cause electrons to move from the source to the drain, which will allow current to flow to the output device. When the gate voltage is reduced, the electric field reverses and the electrons move back to the source, preventing current from flowing to the output device. By using this "on/off" type of operation, it is possible to control the output current, allowing for the flexibility needed in a switchmode power supply.The SI7880ADP-T1-E3 is an extremely versatile and reliable device for control circuitry projects, as well as for high-current applications due to its wide operating temperature range and high power dissipation. It is available in a variety of packages, from the traditional leaded package to the surface mount package, making it suitable for a wide range of projects. Understanding the basics of how an MOSFET works, and specifically how the SI7880ADP-T1-E3 works, can help users take full advantage of the device for their projects.

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