SI7860ADP-T1-E3 Allicdata Electronics
Allicdata Part #:

SI7860ADP-T1-E3-ND

Manufacturer Part#:

SI7860ADP-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 11A PPAK SO-8
More Detail: N-Channel 30V 11A (Ta) 1.8W (Ta) Surface Mount Pow...
DataSheet: SI7860ADP-T1-E3 datasheetSI7860ADP-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs (Max): ±20V
FET Feature: --
Power Dissipation (Max): 1.8W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Description

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The SI7860ADP-T1-E3 is a highly advanced application field and working principle FET (Field-Effect Transistor). It is used for high-frequency autotransforming, light reflecting and switching components. This device is designed for single-input, multi-output (SINGOM) applications, such as BCD (Binary Coded Decimal) encoding, digital signals, and low-power switching, but it can be used for other types of applications as well. It\'s an ideal choice for industrial settings and has become a preferred option for many commercial and residential applications due to its reliable performance, low cost, and high reliable performance.The SI7860ADP-T1-E3 is a low-voltage, low-power, low-frequency device with a very low noise level. It has a field-effect gate, source and drain terminals that are connected in a single package, which eliminates the need for a discrete MOSFET (Metal Oxide Semiconductor FET) in order to power the device. This device is also known as an SMPS (Switch Mode Power Supply). It allows the user to control the on and off states of the device with a single voltage or current inputs.The SI7860ADP-T1-E3 works by allowing an electrical current to flow through the device\'s gate in order to control the resistance between the source and the drain. When the gate voltage is low, the resistance between the source and the drain is low, allowing the current to flow freely through the device. When the gate voltage is high, the resistance between the source and the drain is high, thus limiting current flow. When the drain current is limited, the device switches off, turning the device off and preventing further current flow.One of the main advantages of using the SI7860ADP-T1-E3 is its ability to operate in low-voltage and low-power environments without needing any additional power or components. This allows it to be used in a variety of high-performance, low-power applications, such as in motor control, power switching and energy conversion applications. The device can also be used in automotive and medical applications, as the low-voltage and low-power operation reduces the risk of breakage due to excessive current or heat.The SI7860ADP-T1-E3 also offers additional features, such as low RDS (on) resistance (resistance between the drain and source at on state), fast switching speed, and low threshold voltage. These features make it suitable for high-speed digital circuit designs, as well as very low-power, low-voltage applications.Overall, the SI7860ADP-T1-E3 is an excellent choice for a wide variety of applications, and its low cost, high performance, and low power requirements make it one of the most popular devices on the market. It is an ideal choice for both commercial and residential applications, and its wide range of features make it a great choice for any application. Thanks to its low-voltage, low-power operation, the SI7860ADP-T1-E3 is a preferred option for many industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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