Allicdata Part #: | SI7844DP-T1-GE3CT-ND |
Manufacturer Part#: |
SI7844DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 6.4A PPAK SO-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6.4A 1.4W Surf... |
DataSheet: | SI7844DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6.4A |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual |
Base Part Number: | SI7844 |
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The SI7844DP-T1-GE3 is a fully integrated array of n-channel field-effect transistors (FETs) that provide high efficiency for switching power conversion applications. The FETs are housed in a single 20-pin dual-in-line package, and are designed for superior power switching performance. The SI7844DP-T1-GE3 was developed to reduce the number of board components, simplify circuit layout and reduce overall assembly costs.
Overview of the Application Field
Power MOSFET array is commonly used in various electronic applications with the ability to switch efficiently and quickly. Typical applications include DC-DC converters, portable electronic device power supplies, uninterruptible power supplies (UPS), power management in automotive systems, and other power system designs with enhanced thermal performance and reduced board area.
Working Principle of the SI7844DP-T1-GE3
The SI7844DP-T1-GE3 utilizes the principles of field-effect transistor (FET) operation to control the current flowing through the device. FETs operate by manipulating the drain-source voltage and gate-source voltage, which in turn control the current flow. In the SI7844DP-T1-GE3, an individual gate is connected to the source of each FET. When a gate-source voltage is applied, a depletion layer forms around the gate and channels of the drain-source region. This depletion layer creates an insulated lateral region, called the inversion layer, in between the source and drain regions, which allows current to flow from the drain to the source. As gate-source voltage] is reduced, the depletion layer shrinks, thereby reducing the current flow.
Conclusion
The SI7844DP-T1-GE3 is a high efficiency n-channel power MOSFET array with superior power switching performance, providing simplified circuit layout and assembly for a variety of power conversion applications. The device is designed to utilize the principles the FETs operation to control current flow by manipulation of the drain-source voltage and the gate-source voltage. With this type of power solution, engineers can reduce the number of board components, simplify circuit layout and reduce overall assembly costs while boosting efficiency and performance.
The specific data is subject to PDF, and the above content is for reference
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