SI7848BDP-T1-GE3

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The SI7848BDP-T1-GE3 is one of the most powerful single transistor FET (Field Effect Transistor) solutions available today. It is optimized for use in high-current, high-precision power switching applications. With its unique features and capabilities, the SI7848BDP-T1-GE3 is ideal for military, industrial, and telecommunications applications.

Overview

The SI7848BDP-T1-GE3 is a high-temperature, high-current N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed primarily for power switching applications. It offers a fast switching speed, low on-resistance, and low gate charge. The max current rating of the SI7848BDP-T1-GE3 is 60 Amps, which makes it ideal for switching high-currents in applications such as power supplies, motor control, automotive, UPSs, etc. It is available in a TO-220AB package and is sold in a bulk or tape-and-reel form.

Application Fields

The SI7848BDP-T1-GE3 is ideal for high-precision power switching applications such as those found in industrial, telecommunication, and military applications. It can be used for solid-state relays, power supplies, motor control, UPSs, and many other applications. In addition to its versatility, the SI7848BDP-T1-GE3 is renowned for its high performance, making it a great choice for precise power switching.

Features

The SI7848BDP-T1-GE3 is usually tested with a voltage rating of 12V and can withstand peak currents of up to 60A. It has a low on-resistance of 55 mOhm, and can be used in high temperature environments due to its enhanced thermal overload protection. The gate threshold voltage of the SI7848BDP-T1-GE3 is also very low at 4V, making it suitable for low voltage applications.

Working Principle

The SI7848BDP-T1-GE3 operates on the principle of the enhancement-mode. This means that when the source-gate voltage is close to 0V, it does not pass any current. However, when the gate voltage exceeds the threshold voltage of the device, then the MOSFET turns on and allows the flow of current from the drain to the source.

The drain-gate voltage also plays an important role in the functionality of MOSFET. If the drain-gate voltage is equal to or above the threshold voltage of the device, it will not conduct any current. However, once the drain-gate voltage is less than the threshold voltage, the MOSFET will allow current to flow between the drain and source.

The SI7848BDP-T1-GE3 is an efficient and reliable MOSFET solution. It offers an impressive power switching performance and is ideal for use in high-current, high-precision power switching applications. The low drain-source resistance, combined with its low gate charge, allows for fast switching speed and improved power efficiency.

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