SI7860ADP-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7860ADP-T1-GE3 is a N-channel enhancement mode field-effect transistor suitable for automotive applications. It utilizes a vertical DMOS structure and DMOS technology to achieve less gate charge, low noise and improved switching performance. This device has been designed for power switching applications and offers functional and parametric improvements for improved power transistor performance. It can be used in a wide variety of automotive and consumer applications where dependability and performance are important.

The primary application field for the SI7860ADP-T1-GE3 is power switching in automotive and consumer applications. This device has built-in protection circuits that offer a wide range of protection features. These include overcurrent protection, thermal protection, and latch-up protection. Additionally, this device also offers fast switching performance, gate current leakage control, and low output RDS(on).

The working principle of the SI7860ADP-T1-GE3 is similar to that of other enhancement mode MOSFETs. This device utilizes a vertical DMOS structure that improves its switching performance, while also offering a low gate charge. When the voltage on the gate is greater than the threshold voltage, the MOSFET will turn on, and current will flow from the drain-to-source. When the voltage on the gate is less than the threshold voltage, the MOSFET will turn off and no current will flow from drain-to-source. Therefore, the SI7860ADP-T1-GE3 can be used as a switch to efficiently control current in automotive and consumer applications.

In summary, the SI7860ADP-T1-GE3 is a N-channel enhancement mode field-effect transistor designed specifically for power switching applications in automotive and consumer applications. It utilizes a vertical DMOS structure and DMOS technology to improve its switching performance, while also offering a wide range of protection features and low gate charge. The working principle of this device is similar to other enhancement mode MOSFETs, where the voltage on the gate must be greater than the threshold voltage for the MOSFET to turn on. As such, the SI7860ADP-T1-GE3 is a reliable and efficient power switching option for automotive and consumer applications.

The specific data is subject to PDF, and the above content is for reference