SI7858ADP-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7858ADP-T1-GE3 is a single N-Channel enhancement mode MOSFET with the latest advancements in process and packaging technology. It is suited for power management, audio and lighting applications, as well as industrial, automotive, and consumer applications.

The SI7858ADP-T1-GE3 offers high performance and low on-state resistance (RDS(on)) in a small footprint package and is designed to deliver reliable power in any circuit..

The SI7858ADP-T1-GE3 is a state-of-the-art high-speed logic level MOSFET that is specifically designed for use in modern power applications. It has a wide operating voltage range, low switch threshold voltage, low input capacitance, low RDS(on) and very low gate charge. This combination of features makes it an ideal choice for applications where high switching frequency, low power loss, small footprint and low power consumption are required.

The SL7858ADP-T1-GE3 is a type of Smart power MOSFET. It features robust low on-state resistance, over temperature protection, and gate turn-off protection. Additionally, it has a low gate source voltage which allows for operation from a wide range of input voltage levels. These features make it a reliable, efficient and cost-effective choice for power applications.

The SI7858ADP-T1-GE3 is a low-threshold voltage MOSFET that features high on-state resistance (RDS(on)). The device is ideal for switching applications where the on-state resistance is an important parameter, such as power management and lighting applications.

The high on-state resistance helps to reduce the power consumption of the application. Additionally, the device is also suitable for operation at high switching frequencies due to its minimal input capacitance, making it suitable for use in high speed logic circuits.

The SI7858ADP-T1-GE3 working principle is based on the basic MOSFET or Metal Oxide Semiconductor Field Effect Transistor. A MOSFET is a three-terminal semiconductor device which consists of source and drain electrodes connected by a thin oxide layer. When a voltage of the correct polarity is applied to the gate terminal, the oxide layer acts as an insulated gate and a drain current flows in the channel formed between the source and drain electrodes.

The SI7858ADP-T1-GE3 is designed for efficient operation in both the Linear and Amplification modes. In the Linear mode, the device works as a linear device, meaning that it can control power delivered over a specified range. This mode is suitable for applications such as motor speed control, lighting control and audio amplifiers, where smooth transition between on and off states is desired. In the Amplification mode, the device acts as a switch and is capable of rapidly switching current.

The SI7858ADP-T1-GE3 combines all of these features to provide an efficient, reliable, robust and cost-effective solution for power management, audio and lighting applications. It is an ideal choice for providing high performance in any circuit and offers high on-state resistance and over-temperature protection.

The specific data is subject to PDF, and the above content is for reference