Allicdata Part #: | SI7840BDP-T1-E3-ND |
Manufacturer Part#: |
SI7840BDP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 11A PPAK SO-8 |
More Detail: | N-Channel 30V 11A (Ta) 1.8W (Ta) Surface Mount Pow... |
DataSheet: | SI7840BDP-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 16.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 4.5V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 1.8W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
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The SI7840BDP-T1-E3 is a single N-Channel MOSFET (metal-oxide semiconductor field-effect transistor) that is available in a 5-pin TO-220 package, with a drain-source amperage rated at 20A, a source-gate amperage of 10A and an on-resistance at 25°C of 60mΩ.
The SI7840BDP-T1-E3 is designed for medium to high power DC applications, such as motor drives, power regulators, lighting control, load switching, DC-DC converters and DC injection braking systems. It is rated for a voltage of 30V with a fully characterised avalanche capability. Typical applications include switching power supplies, inrush current limiters, home appliances, and controllers for AC and DC motors.
The SI7840BDP-T1-E3 has a structure consisting of an N-Channel MOSFET. Its working principle is based on the use of a voltage applied to a gate terminal to attract a current carrying channel between the source and the drain terminals, allowing current to flow and creating an electrical “on” state. Voltage applied to the gate will be of lower value than the source-drain voltage, which should be 0V in the absence of gate voltage. This gate voltage will create a conductive path between source and drain if it is applied at a sufficient level.
The SI7840BDP-T1-E3 offers a high level of drain current for a low on resistance, allowing it to support high power applications. This makes it ideal for controlling large current flows with low gate voltages. It has been designed with a high immunity to ESD (electrostatic discharge) events in order to protect its operation in sensitive electrical applications. It also has been designed for low gate charge, allowing it to turn-on with lower voltage and improved efficiency when compared to other MOSFETs.
The SI7840BDP-T1-E3 is easy to use and offers high reliability in a wide temperature range. It is RoHS compliant, UL recognized and halogen free, making it suitable for a variety of applications. It is available in small and large production quantities, making it an ideal choice for a wide range of medium to high power DC applications. The SI7840BDP-T1-E3 is an excellent choice for a wide range of applications due to its high current ratings and low on-resistance.
The specific data is subject to PDF, and the above content is for reference
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