SI7848DP-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7848DP-T1-E3 is one of a series of products manufactured by Vishay Intertechnology and is a single, low-voltage, N-channel MOSFET Transistor. It is designed to be used in a variety of High Speed Light Load Switching Applications.

The SI7848DP-T1-E3 is able to handle high frequency switching at speeds of up to 3800MHz. It has a low threshold voltage of 0.5V and a low on-state resistance of just 0.0032Ω. It also features a very low minimum gate-source voltage of just 1.8V. The device is available in a small, Surface Mounted (SMD) package of 3×3 mm and is an ideal choice for applications that require a compact design.

The working principle of the SI7848DP-T1-E3 is relatively simple and relies on a series of capabilities. The device utilizes MOSFET transistors in order to amplify electrical signals and act as a switch. When a positive voltage is applied to the gate of the MOSFET, a high impedance is formed between the drain and source terminals due to the transistor action. When the positive voltage is removed, the high impedance ensures that no current passes between the terminals.

This principle of operation makes the SI7848DP-T1-E3 a powerful choice for applications requiring fast switching speeds and low power consumption. The device is well-suited for use in automotive electronics, consumer electronics, power management solutions, and communication systems. It can also be used in motor driver circuits as a substitute for mechanical relays.

In addition to its low power consumption and fast switching speed, the SI7848DP-T1-E3 also has a high operating temperature range of -55°C to 150°C. This makes it ideal for use in temperature-sensitive applications and tough environmental conditions. The device is also UL and ROHS Compliant and is compliant with AEC-Q101 standards for automotive applications.

The SI7848DP-T1-E3 is an excellent choice for applications that require high frequency and low power consumption. The device also works well in applications that require high temperatures and is compliant with safety standards. It is a powerful single, low voltage N-channel MOSFET transistor solution, making it a reliable and efficient choice.

The specific data is subject to PDF, and the above content is for reference