SI7886ADP-T1-GE3

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The SI7886ADP-T1-GE3 is a three-terminal, high-performance silicon gate N-channel enhancement mode MOSFET, designed for use in applications where high voltage and high current capability is required. This MOSFET is specifically designed to offer protection against current density and surge response, as well as efficient heat dissipation and switching at high frequency.

The SI7886ADP-T1-GE3 is the most suitable choice for applications such as DC/DC converters, motor control, power line conditioners, computer power supplies and various switching applications. The SI7886ADP-T1-GE3 has a wide operating voltage range of -20V to +20V and a maximum drain-source voltage of 20V. It has a drain current rating of up to 5 amps and a minimal on-resistance of ≤200mΩ at VGS=2.5V. The device can operate at a temperature range of -55°C to +125°C.

An important feature of the SI7886ADP-T1-GE3 is its Schottky barrier metal-oxide-semiconductor (SbMOS) structure which makes it ideal for applications that require very low power consumption and minimum conduction losses. The structure results in a very low input capacitance which enables fast switching of the device. Additionally, the SI7886ADP-T1-GE3 has a low threshold voltage and a high total gate charge which leads to a low total gate capacitance. This allows for high-speed switching and a low gate-source capacitance which results in excellent protection against transients.

The working principle of the SI7886ADP-T1-GE3 is based on the field effect transistor (FET). This type of transistor uses a voltage applied to the gate terminal to modulate the current that passes through the drain and source terminals. When the gate voltage is 0V no current passes between the two terminals, however, as the gate voltage increases the current also increases. This type of device is attractive for use in high power applications as it can switch large currents quickly and consume very little power in the process.

The SI7886ADP-T1-GE3 is a versatile device used in a variety of applications across many industries. It is perfect for high-frequency switching due to its low total gate capacitance. It is also suitable for use in DC/DC converters and motor control applications due to its high current rating and its ability to dissipate heat efficiently. Additionally, it is able to provide protection against transients and surges due to its SbMOS structure.

In conclusion, the SI7886ADP-T1-GE3 is a MOSFET which is ideal for use in high-voltage and high-current applications. It is well-suited for use in a variety of industry applications due to its ability to switch large currents and dissipate heat efficiently. Additionally, it is able to provide protection against current density and surge response due to its low input capacitance and Schottky barrier metal-oxide-semiconductor (SbMOS) structure. This versatile device is an essential part of many industries and applications.

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