Allicdata Part #: | SI7888DP-T1-E3-ND |
Manufacturer Part#: |
SI7888DP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 9.4A PPAK SO-8 |
More Detail: | N-Channel 30V 9.4A (Ta) 1.8W (Ta) Surface Mount Po... |
DataSheet: | SI7888DP-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 12.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI7888DP-T1-E3 is an advanced single N-channel MOSFET designed for extremely low RDS(ON). This device is optimized for high efficiency, low loss and high power density in applications such as server, enterprise and telecom power systems. The device exhibits excellent switching characteristics, and its high channel density also makes it an ideal choice for high-speed and low-voltage switching applications.
Applications of the SI7888DP-T1-E3 include:
- Switch mode power supplies
- DC-DC conversion
- Motor control
- Portable battery-powered equipment
- Telecommunications applications
- Advanced LED lighting systems
- Automotive electronics
The SI7888DP-T1-E3 has several features which make it superior to most other MOSFETs. It is the lowest RDS(ON) single N-channel MOSFET on the market, which enables it to switch at high speed with very low voltage losses. It also has a low body diode recovery time and can be operated at high temperatures up to 150°C.
Working Principle
The SI7888DP-T1-E3 is a single N-channel MOSFET which uses a gate to control the flow of electrons from the drain to the source, creating a resistance which can be used to regulate the power supply voltage. When the gate voltage is applied, the device enters into a conductive state and electrons can flow through it. When the gate voltage is removed, the resistance between the drain and source increases, allowing the power supply voltage to remain regulated.
The SI7888DP-T1-E3 also utilizes a dynamic body diode to protect against excess current. When the drain-to-source voltage exceeds the maximum rating, the body diode begins to conduct, limiting the current. This protection feature allows the MOSFET to operate at high voltages without the risk of damage from overcurrent.
Overall, the SI7888DP-T1-E3 is an ideal choice for many applications requiring high efficiency, high power density and ultra-low RDS(ON). Its superior switching characteristics and body diode protection make it an excellent choice for server, enterprise and telecom power systems.
The specific data is subject to PDF, and the above content is for reference
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