SI7852DP-T1-GE3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:	41nC @ 10V
Vgs (Max):	±20V
FET Feature:	--
Power Dissipation (Max):	1.9W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SO-8
Package / Case:	PowerPAK® SO-8
Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80V
Current - Continuous Drain (Id) @ 25°C:	7.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	16.5 mOhm @ 10A, 10V

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The SI7852DP-T1-GE3 is a high voltage, low on-resistance N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) for use as a switch in various high power applications. This type of MOSFET is used in a variety of electrical components, from battery packs and board-level components to optoelectronic displays, solar invertors, automotive systems and more. In this article, we will discuss the application fields and working principle of the SI7852DP-T1-GE3.The main application fields of the SI7852DP-T1-GE3 are power switching, battery management, and other high-voltage power applications in consumer and industrial circuit systems. The MOSFET offers up to 20V drain-source voltage and low on-resistance due to its low-voltage NMOS construction. This makes it an ideal solution for applications involving medium-to-high voltage switches, as it can handle up to 20V with a very low on-resistance.In terms of working principle, the SI7852DP-T1-GE3 works on a principle of applying a voltage to a gate to control the flow of current through the drain and source of the MOSFET. The basic principle of operation is known as the "voltage-controlled current source". In this device, the voltage applied to the gate sets the current through the device based on the voltage, current and on-resistance of the device. When the drain-source voltage is above the gate threshold voltage, the device turns on and allows current to flow.The SI7852DP-T1-GE3 offers a high operating temperature range of up to +150°C and operates at a low supply current of 7mA. This makes it suitable for high voltage and/or high temperature applications. Additionally, it is designed to be compatible with other high-voltage N-channel MOSFETs, allowing it to be used in a wide range of circuit designs.The gate-source threshold voltage of the device is 2V and its threshold voltage temperature coefficient is -75mV/°C, indicating good thermal stability. The gate-source capacitance of the device is low, reducing the need for extra gate drive components. Finally, the avalanche energy of the device is 19mJ, further enhancing its functionality in high-power applications.In summary, the SI7852DP-T1-GE3 is a high voltage, low on-resistance N-Channel MOSFET suitable for a variety of power switching applications. The device offers exceptional performance due to its low on-resistance, high drain-source voltage, high operating temperature range and low gate-source capacitance. The device can be used in a variety of electronics applications, from battery management, optoelectronic displays, solar inverters and more. It is an ideal solution for medium-to-high voltage switches, as it can handle up to 20V with very low on-resistance. Furthermore, its excellent thermal stability and avalanche energy reduce the need for additional gate drive components, making it an excellent choice for powering up high-power circuit systems.

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