SI7820DN-T1-E3 Allicdata Electronics
Allicdata Part #:

SI7820DN-T1-E3TR-ND

Manufacturer Part#:

SI7820DN-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 200V 1.7A 1212-8
More Detail: N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount P...
DataSheet: SI7820DN-T1-E3 datasheetSI7820DN-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7820DN-T1-E3 is a field effect transistor (FET) specially designed for precise control of power in a wide variety of applications. It is a single N-channel MOSFET made from a material often referred to as "pocket Polysilicon." It is widely used in automotive electronics, power supplies, audio amplifiers, and other applications. In this article, we\'ll discuss the features, applications, and benefits of the SI7820DN-T1-E3 FET.The SI7820DN-T1-E3 is a single N-channel MOSFET made with a specially designed pocket Polysilicon process. It is an enhancement mode MOSFET, which means that it only conducts electricity when its gate is charged. This property allows it to provide precise control of power in a wide variety of applications.The FET has a high-purity pocket Polysilicon gate material. This material provides excellent low-level conduction, high current-carrying capacity, and low Gate Threshold Voltage. The low gate voltage ensures that the FET can switch on rapidly and accurately.The FET has a low thermal resistance and high-power dissipation. This allows it to handle greater amounts of energy without overheating. The FET also has high forward surge current and fast reverse recovery times. This makes it ideal for use in high-power circuits.The SI7820DN-T1-E3 FET also has built-in ESD protection. This helps protect the FET from ESD events and other sudden surges in voltage.The SI7820DN-T1-E3 FET can be used in a number of different applications. It is most commonly used in automotive electronics, power supplies, and audio amplifiers. It can also be used in industrial electronics, lighting controllers, switching regulators, and pulse control circuits.The SI7820DN-T1-E3 FET offers a number of benefits. It is very reliable, with a long working life. It also has a low on-state resistance and can handle a large range of voltages. It is easy to use and test and provides accurate control over power. The FET is also extremely robust and can withstand high temperature and vibration.The SI7820DN-T1-E3 FET is an effective FET for power control. It provides reliable performance and can handle a wide variety of applications. The FET is surprisingly cheap and is a good choice for both commercial and hobbyist applications. It is a great choice for anyone who needs precise control of power without paying a premium price.

The specific data is subject to PDF, and the above content is for reference

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