SI7848BDP-T1-E3

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The SI7848BDP-T1-E3 is a MOSFET (metal oxide semiconductor field-effect transistor) from Vishay. It is a single-n-channel, enhancement-mode DE-SAT FET (Depletion-mode enhancement-mode Self-Aligned transistor) specifically designed for automotive applications. It is suitable for use in applications that require higher power levels such as direct inject, engine control, and audio power amplifiers. The SI7848BDP-T1-E3 is characterized by its high density, low on-resistance, and robust gate-source charge injection. This makes it an ideal choice for applications in which high current capacity and high switching frequency are required.

The SI7848BDP-T1-E3 has a surface mount package that is suitable for automotive applications. It features a low on-resistance of 9.8 mW and a high working temperature of 175⁰C. This MOSFET uses an on-resistive topology, which allows for higher power delivery at an increased efficiency level. The device also features a low gate to source charge injection, which prevents it from becoming unstable during operation. Additionally, the device boasts a wide operating range, making it suitable for a variety of automotive applications.

The SI7848BDP-T1-E3 has a gate-to-source voltage rating of 20 V and a gate-to-drain voltage rating of 20V. The device is rated for an operational temperature range of -40 to 175 ⁰C. In terms of its ESD protection, the device features an improved Human Body Model (HBM) level of 5 kV. This ensures that the device will remain reliable and operational in high ESD accelerating environments.

The SI7848BDP-T1-E3 works on the principle of charge transfer. This is a technology that allows for increased channel mobility and lower resistive losses in a MOSFET. The device features a special internal charge pump, which allows for high switching frequencies. Additionally, the device features a self-aligned structure, which enables it to maintain the proper channel geometry and reduce contact resistance.

The SI7848BDP-T1-E3 is designed for use in automotive applications that require high power delivery and high switching speeds. It is suitable for direct injection, engine control, and audio power amplifiers, as well as applications that require high on-resistance and high ESD protection. The device’s low on-resistance and robust gate-source charge injection make it an ideal choice for these applications.

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