SIR882ADP-T1-GE3

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The SIR882ADP-T1-GE3 is a device from Vishay\'s Automotive-Grade product line and is a P-Channel Single Enhancement Mode Field Effect Transistor (FET). It supports higher current applications and features a low on-resistance (RDSon), low gate charge (Qg) and fast switching speed, making it ideal for automotive and industrial applications such as motor control, DC-DC converters, switching power supplies, battery protection and portable devices.

The SIR882ADP-T1-GE3 is a transistor that utilizes a silicon-on-insulator (SOI) process technology. This enables a very high-gain P-Channel MOSFET with very low on-resistance. The result is a highly efficient switching transistor suitable for high-current applications. The SIR882ADP-T1-GE3 is characterized in its 1000V, 0.0005Ω RDS(on) max version with a maximum Safe Operating Area (SOA) of 210A/160V.

The working principle of the SIR882ADP-T1-GE3 is based on the physics of the P-channel enhancement mode field-effect transistor. The P-channel FET has an N-channel semiconductor and a P-doped semiconductor within its structure. The electrons in the N-channel region will want to move towards the P-doped region, but due to an electric field, they are stopped and cannot cross. When a voltage is applied to the gate of the transistor, the electrons are pushed towards the P-doped region, which reduces the electric field between the two regions and allows the electrons to cross. This current flow is the main principle of P-channel FETs and the SIR882ADP-T1-GE3 is designed to use this principle in order to switch high voltages.

The SIR882ADP-T1-GE3 is a silicon-on-insulator (SOI) version of the P-channel FET and is designed for higher current applications. The SOI process provides lower resistance, or on-resistance (RDSon), and higher switching speeds with lower power dissipation. The improved characteristics of the SIR882ADP-T1-GE3 result in increased system efficiency and higher thermal performance. The device is qualified for automotive applications, making it suitable for use in cars, trucks, and other industrial applications.

In conclusion, the SIR882ADP-T1-GE3 is a P-channel Single Enhancement Mode Field Effect Transistor (FET) designed to provide high current switch applications in automotive and industrial applications. It features a low on-resistance, low gate charge and fast switching speed, making it suitable for high-current applications. The SIR882ADP-T1-GE3 is based on a silicon-on-insulator (SOI) process technology, allowing a high-gain P-Channel MOSFET with low on-resistance. Its improved characteristics result in increased system efficiency and higher thermal performance, making it suitable for automotive applications.

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