SIR892DP-T1-GE3

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The SIR892DP-T1-GE3 transistor is a single P-channel MOSFET (metal-oxide semiconductor field effect transistor) also known as an unipolar transistor. It is designed to be used with an insulated gate as a voltage-controlled switch, where electrical current flows through one part of the device when voltage is applied to a different portion of the device.

The SIR892DP-T1-GE3 technology utilizes an ultra-thin gate oxide which enables high-density, high-current capability. The thin-oxide construction results in gate dielectric breakdown voltages above 20V. This makes the SIR892DP-T1-GE3 suitable for a wide range of applications including power line communications, power supplies, precision power regulation, high-speed switching, and instrumentation circuits.

The SIR892DP-T1-GE3 is ideal for linear applications where a low on-resistance is required. Low on-resistance is key in applications that require high levels of accuracy and low board space. This transistor has a very low drain-source on-resistance of 60 mΩ. Its high gate-source breakdown voltage ensures robust protection against voltage transients on the drain side.

The SIR892DP-T1-GE3 works according to the principle of current flow when voltage is applied to the gate. If a positive voltage is applied on the gate, the current will start to flow through the device as it switches on, as long as a source to drain voltage is present. Once the voltage is applied, the current will start to flow through the transistor in a linear fashion until the voltage is removed from the gate.

The SIR892DP-T1-GE3 has a variety of applications, most notably for power line communications where it is used to control the flow of current across the line. It is also commonly used in power supplies, high-speed switching, and instrumentation circuits. Its low on-resistance makes it particularly suitable for use in low power applications such as LED drivers.

The SIR892DP-T1-GE3 is an excellent choice for many applications due to its low on-resistance, high-current capability, and high gate-source breakdown voltage. It is designed to withstand voltages up to 20V and operates at a maximum temperature of 150°C. This makes it a reliable option for a wide range of applications.

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