| Allicdata Part #: | SIR812DP-T1-GE3TR-ND |
| Manufacturer Part#: |
SIR812DP-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 60A PPAK SO-8 |
| More Detail: | N-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surfa... |
| DataSheet: |  SIR812DP-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 6.25W (Ta), 104W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10240pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 335nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 1.45 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SIR812DP-T1-GE3 is a low-voltage, N-channel MOSFET that is designed for specific applications. It has been designed to offer superior power efficiency, a wider range of gate voltages, and fast switching speeds. The SIR812DP-T1-GE3 is versatile, with the ability to be used in a wide range of devices and applications. The SIR812DP-T1-GE3 is a type of MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), which is a form of transistor that relies on an electrical charge to switch between two states. In the case of the SIR812DP-T1-GE3, it is set up as an N-channel MOSFET, meaning it is made of a metal oxide semiconductor with a thin gate and source. The thin gate controls the flow of current, allowing current to flow through the semiconductor when it is exposed to an electrical charge.The SIR812DP-T1-GE3 is designed for low voltage applications, allowing it to save power and reduce switch times. It can handle up to a 40V max drain-source voltage and 20V max gate-source voltage. This makes it suitable for a variety of applications, from small consumer electronics to automotive components.The SIR812DP-T1-GE3 also offers superior power handling compared to other MOSFETs. It is able to handle up to 2 A of DC current, and up to 3 A peak. This makes it suitable for devices that require a lot of power, such as portable electronics, home appliances, and automotive devices.The SIR812DP-T1-GE3 offers fast switching speeds as well, allowing it to quickly switch between two states. This makes it suitable for applications that require fast switching times, such as audio amplifiers and control systems.The SIR812DP-T1-GE3 is well suited to a variety of different applications, and is especially well suited to automotive devices. It offers superior power efficiency, a wider range of gate voltages, and fast switching speeds, making it suitable for a number of automotive applications such as in-car audio systems, onboard computer systems, and engine controllers.In summary, the SIR812DP-T1-GE3 is a low-voltage, N-channel MOSFET that is suitable for a variety of applications. It has been designed to offer superior power efficiency, a wider range of gate voltages, and fast switching speeds. It is also suitable for automotive applications, such as in-car audio systems, onboard computer systems, and engine controllers.
The specific data is subject to PDF, and the above content is for reference
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