SIR878BDP-T1-RE3

Vgs(th) (Max) @ Id:	3.4V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5W (Ta), 62.5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1850pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 10V
Series:	TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:	14.4 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	7.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta), 42.5A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SIR878BDP-T1-RE3 is a P-channel MOSFET which is designed for low voltage, high speed switching applications. With a maximum drain-source voltage rating of 30 V and a maximum drain current rating of up to 1.2A, this MOSFET can provide reliable and efficient performance in a wide variety of switching applications.The SIR878BDP-T1-RE3 features a P-channel silicon gate MOSFET semiconductor device with a very low gate threshold voltage of 2.5V. This low gate threshold voltage makes it suitable for use in circuits with low supply voltage levels. It also has a high switching speed, which helps reduce power dissipation, allowing for greater efficiency and increased system performance.In terms of physical characteristics, the SIR878BDP-T1-RE3 is composed of six terminals. It has three source connections (S1, S2 and S3) which are connected to the drain (D) with a common source line. The gate (G) terminal is also connected to the source. The body (B) terminal is connected to the gate with a separate grounding line. All of the terminals are protected against static discharge with ESD protection. The total package weight of the device is 2.9g.To understand the working principle of the SIR878BDP-T1-RE3, it helps to start with a brief overview of the basic principles of MOSFETs. MOSFETs are voltage-controlled semiconductor devices which have three terminals (also known as the source, drain and gate). The source terminal is where electrons enter the device, and the drain terminal is where electrons leave the device. The gate terminal is used to improve the performance of the device by controlling and modulating the flow of electrons. An electrical signal, or voltage, applied to the gate allows electrons to flow from the source to the drain. This allows the current between the source and drain to be controlled and regulated.The SIR878BDP-T1-RE3 is designed for applications where low voltage, high speed switching is needed. It has a low gate threshold voltage and a high switching speed, which allows it to be used in applications with limited power supply levels. With its high current rating, it can also be used for applications which require higher currents than other MOSFETs of the same package size.The SIR878BDP-T1-RE3 can be used in a wide range of applications, such as automotive, consumer electronics, computer, telecommunication and industrial electronics. It is especially well-suited for use in circuits which require high-speed switching, such as power management circuits, audio amplifiers and LED drivers. The SIR878BDP-T1-RE3 can also be used in power supplies for consumer electronic devices, such as video game consoles and televisions.In summary, the SIR878BDP-T1-RE3 is a P-channel MOSFET designed for low voltage, high speed switching applications. With its low gate threshold voltage and high current rating, it can provide reliable and efficient performance in a wide variety of circuits. It is especially well-suited for use in circuits which require high-speed switching, such as power management circuits, audio amplifiers and LED drivers.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description