| Allicdata Part #: | SIR880ADP-T1-GE3TR-ND |
| Manufacturer Part#: |
SIR880ADP-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 80V 60A PPAK SO-8 |
| More Detail: | N-Channel 80V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface... |
| DataSheet: |  SIR880ADP-T1-GE3 Datasheet/PDF |
| Quantity: | 3000 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 5.4W (Ta), 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2289pF @ 40V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SIR880ADP-T1-GE3 is a small signal Field-Effect Transistor (FET), similar to the recently produced transistors in the industry. To operators and engineers, FETs offer extremely valuable properties that enable them to perform digital and analog switching without any problems.The SIR880ADP-T1-GE3 is a single MOSFET specially designed for high-frequency applications in the low-rf-power range. This device offers excellent voltage-resistance stability and structural integrity thanks to its small size and shape. The SIR880ADP-T1-GE3 is used in a variety of different applications. In particular, it is suitable for radiofrequency (RF) power switching applications and for modulator and power oscillator systems. It is also possible to use this device for high-frequency low voltage applications. The SIR880ADP-T1-GE3 operates based on the MOS transistor structure in which the gate oxide layer is used to control the current flowing through it, or the direction of current flow. A voltage applied to the gate oxide layer will cause a change in the conductivity of the channel region between the source and drain, allowing the flow of electrons through the device. The SIR880ADP-T1-GE3 works in two directions, depending on the current flow. For instance, if the voltage applied to the gate oxide layer is a positive voltage, then current flows from the source to the drain. On the other hand, if the voltage applied to the gate oxide layer is a negative voltage, then current flows from the drain to the source. This can be used to advantage in digital and analog power switching applications. The SIR880ADP-T1-GE3 also has the capability to switch on and off 200 times per second, or a repetition frequency of 200 kHz. This is associated with a very low quiescent transistor current, which is the amount of current that flows through the device when no voltage is applied to the gate oxide layer. This small quiescent current is ideal for high speed digital applications.Another attractive feature of the SIR880ADP-T1-GE3 is its low effective capacitance. This provides engineers and operators with excellent device characteristics and reduces crosstalk effects when used as an oscillator or switching device.In addition, the SIR880ADP-T1-GE3 also has an excellent wide-temperature range that allows it to be used in a wide variety of temperature extremes. This makes this device suitable for many different applications where a wide temperature range is required. The SIR880ADP-T1-GE3 is a great tool for digital and analog switching applications, with excellent voltage and resistance stability in a small form factor. It also has a remarkably wide temperature range, a low quiescent current, and a very low effective capacitance that makes it perfect for a variety of RF power switching applications. Overall, this makes the SIR880ADP-T1-GE3 an excellent choice for engineers, operators, and technicians.The specific data is subject to PDF, and the above content is for reference
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