SIR874DP-T1-GE3

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.9W (Ta), 29.8W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	985pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	9.4 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction
The SIR874DP-T1-GE3 Transistor is a single-gate FET (Field Effect Transistor) developed by Panasonic as a high-speed switching element and capable of providing high efficiency switching control. It works by controlling the amount of current passing through the device using a gate voltage or terminal. This is done by allowing the current to flow between a source terminal and a drain terminal when a gate voltage is applied and providing a low on-resistance at an acceptable off-state static current. Application Field and Working Principle
The SIR874DP-T1-GE3’sapplication field is multi-faceted as it finds applications in various fields, some of which are power supply Control, DC/DC Converters, Motor Control System, Inverter and other such goods. Its features make it ideal for various power control applications and is especially suitable in the field of motor control systems.
The SIR874DP-T1-GE3 Transistor works on the principle of current control by a gate voltage. When a gate voltage is applied, the current starts to flow from a source terminal through a channel which isformed between a drain and a source terminal and then flows towards the drain terminal. In the off-state, the static current is very low and the on-resistance is also low during the on-state.The low on-resistance of the SIR874DP-T1-GE3 Transistor enables it to handle high power with minimal losses, making it an extremely efficient switching element. This brings a variety of applications where the FET can be used, such as DC/DC Converters, Motor Control System and Inverter, where it can provide a high switching speed and be used for the control of power devices like power transistors and IGBTs.
The FET’s low ESR (Equivalent Series Resistance) and UCEsat (collector-emitter saturation voltage) makes it a suitable FET for applications requiring high speed switching of large currents, such as power transformers and power converters, power switches, DC/DC converters, IGBTs and other such devices. Additionally, its high current handling capacity and low on-resistance offer excellent thermal dissipation when switched at high frequency.The FET can be operated at high frequencies with a very low switching loss due to its low input and output capacitances. This minimizes switching losses and improves the efficiency of the system. Additionally, its low on-resistance to increase switching speed and minimizes the switching time in DC/DC converters. Moreover, its very low drain-source capacitance enables it to have high switching speed with less ringing.Moreover, its low gate charge, which is also known as gate effect, results in low power loss through the electromagnetic field produced by the FET. Furthermore, its low gate-drain capacitance results in less noise, increasing system dependability. It also has a high surge current capability that allows it to tolerate high electrical shock without jeopardizing the performance of the device.In conclusion, the SIR874DP-T1-GE3 Transistor is an efficient and versatile FET that can be used for power applications. Its low on-resistance and low ESR (Equivalent Series Resistance) allow devices to comply with very stringent requirements. Its low gate charge, low gate-drain capacitance and high surge current capability make it a suitable choice for design of power systems with high frequency switching and low ringing. Its high current handling capacity makes it an excellent choice for applications where large currents are switched on and off with minimal losses.

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