SIR826ADP-T1-GE3

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The SIR826ADP-T1-GE3 is a single field effect transistor (FET) made by Vishay Siliconix. It is a N-Channel FET, which means that it can draw an amount of current when it is put in a circuit. The transistor is used in many different applications. In this article, we will discuss the application field and working principle of the SIR826ADP-T1-GE3.

Application of SIR826ADP-T1-GE3

The SIR826ADP-T1-GE3 is used in a variety of applications because of its low on-state resistance (RDS(on)). This means that the FET can be used to draw a large amount of current from a small amount of voltage. This makes it ideal for power management applications such as DC-DC converters, motor control, and power supplies. It can also be used for switching applications such as high-speed logic circuits, pulse wave modulation (PWM) circuits, and pulse width modulation (PWM) circuits.

The SIR826ADP-T1-GE3 is also used in LED lighting applications because it has a fast switching speed and low on-state resistance. It is used to drive high-power LED array, LED pixels, and LED strings, and is used as a series switch in LED dimming and color mixing applications. It is also used in automotive interior and exterior lighting and display applications. This makes the SIR826ADP-T1-GE3 ideal for automotive applications.

The SIR826ADP-T1-GE3 is also used in RF applications such as RF switches and RF power amplifiers. It is used in RF MEMS switches because of its low on-state resistance and fast switching speed.

Working Principle of SIR826ADP-T1-GE3

The SIR826ADP-T1-GE3 is a N-Channel FET. It works by allowing current to pass through it when a voltage is applied to the Gate pin. When a positive voltage is applied to the Gate pin, the FET is said to be in the “ON” state and current will flow from the Drain to the Source pin. When the voltage at the Gate pin is set to 0V, the FET is said to be in the “OFF” state and no current will flow from the Drain to the Source pin.

The SIR826ADP-T1-GE3 has an RDS(on) of 18 mOhm, which is a measure of the amount of current that can be drawn from a small amount of voltage. The FET has a maximum drain-source voltage of 80 V and a maximum gate-source voltage of 20 V. It also has a maximum operating temperature of 150°C.

Conclusion

The SIR826ADP-T1-GE3 is a N-Channel FET made by Vishay Siliconix. It is used in a variety of applications such as power management, switching, LED lighting, and RF applications. It works by allowing current to flow from the Drain to the Source pin when a positive voltage is applied to the Gate pin. It has an RDS(on) of 18 mOhm, which is a measure of the amount of current it can draw from a small amount of voltage. The SIR826ADP-T1-GE3 is a versatile FET that can be used in a variety of applications.

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