SIR838DP-T1-GE3

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SIR838DP-T1-GE3 is a single type N-channel enhancement-mode Gallium Nitride Field-Effect Transistor (GaN FET). It is designed for high-frequency switching in applications such as computing, telecom and datacom. SIR838DP-T1-GE3 is a high-speed, low-loss GaN FET that combines superior RF performance with fast and robust operation under high power and temperature conditions.

The SIR838DP-T1-GE3 transistor provides a high transconductance (Gm) and high saturation drain current (Idsat). It is capable of handling high average drain currents and high peak drain currents (Id, max). Its low gate charge (Qg) and fast switching speed result in low total gate charges (Qgs + Qgd) and short switching times. The SIR838DP-T1-GE3 also features an ultra-low on-resistance (Rds(on)) for low conduction losses, high transconductance and high gain. This makes it suitable for a wide range of applications where high power, high efficiency and fast switching times are needed.

The working principle of the SIR838DP-T1-GE3 transistor consists of a number of components. The gate is connected to a voltage supply, usually 5 V. When sufficient voltage (Vg) is applied to the gate, electrons from the gate region are induced to flow, creating a channel between the gate and the drain region. This channel increases the conductivity of the transistor, allowing current to flow from the source to the drain. A higher Vg increases the channel’s conductivity, resulting in a higher drain current (Id). Similarly, a lower Vg reduces the channel’s conductivity, resulting in a lower Id.

This transistor is specifically designed for applications where size and power efficiency are important, such as high-frequency switching in telecom and datacom systems. It also offers superior robustness and performance over temperature conditions. Due to its small size and low power requirements, the SIR838DP-T1-GE3 is well-suited for use in space-constrained applications. The transistor is also designed for use in high-temperature environments due to its low on-resistance, low gate charge and fast switching speed.

SIR838DP-T1-GE3 is ideal for use in high frequency switching, high-voltage DC/DC converters, switching power supplies, and high-temperature industrial applications. With its superior performance and robustness, it provides better efficiency and faster switching than other devices in the same category. The SIR838DP-T1-GE3 is a great choice for applications where power reduction and efficiency are the main goals.

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