Allicdata Part #: | SIR870ADP-T1-RE3-ND |
Manufacturer Part#: |
SIR870ADP-T1-RE3 |
Price: | $ 0.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 60A POWERPAKSO |
More Detail: | N-Channel 100V 60A (Tc) 104W (Tc) Surface Mount Po... |
DataSheet: | SIR870ADP-T1-RE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.71497 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2866pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 6.6 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIR870ADP-T1-RE3 is a powerful transistoral package designed for functionality and ease of use. This is a Field Effect Transistor (FET), more specifically a N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). As mentioned, this component is a single component, representing a transistor consisting of one element and two sides for conducting current. The SIR870ADP-T1-RE3 mainly finds use in amplifying, switching, and logic applications. In other words, this component is used to control the flow of current in a system. It is capable of switching high voltage, as well as handling high power, without drawing too much current from the source.
The working principle behind this component involves the use of a gate and a source. This FET component has three terminals—the gate (G), the drain (D) and the source (S). The gate terminal acts as the control element, whereas the drain and source work as the conductive elements. Applying a negative voltage to the gate terminal results in the two main semiconductor regions forming around the gate. The semiconductor regions next to each other creates a region of depletion, in which the negative gate voltage attracts electrons from the positive source region. This conduction of electrons from the source to the gate creates an electric field between the source and the gate. Thus, the gate voltage controls the current flow between the source and the drain.
The SIR870ADP-T1-RE3 features very low input capacitance, high breakdown voltages, and a wide range of RDS-on values. This makes it ideal for a variety of applications, such as power amplifying circuits, motor control, switching amplifiers, and communication circuits. Moreover, this type of FET is often used in power systems, professional audio applications, RF power amplifiers, and the like. Furthermore, this component is extremely reliable, durable and can handle high temperatures, making it suitable for harsh industrial environments.
Contemporary applications of the SIR870ADP-T1-RE3 include switching circuits, power management, and power supply systems for various consumer electronics and gaming devices, such as personal computers, precision audio amplifiers, digital video equipment, power control units and power adapters. This type of transistor can also be used in automotive applications, such as automotive traction systems, fuel injection systems, and ignition systems.
In conclusion, the SIR870ADP-T1-RE3 is a powerful, single FET package that features features ease of use, high power handling capability, and wide range of RDS-on values. It finds use in a variety of applications, such as automotive systems, power amplifying circuits and RF power amplifiers, among others. Due to its reliable and durable construction, it can handle extreme temperatures and high power, making it a preferred choice for harsh industrial environments.
The specific data is subject to PDF, and the above content is for reference
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