SIR826DP-T1-GE3 Discrete Semiconductor Products

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The SIR826DP-T1-GE3 is a high-performance, low-cost, bipolar N-Channel enhancement mode MOSFET (metal–oxide–semiconductor field-effect transistor). This type of transistor is often used as a switching device for amplifiers, circuit protections, voltage regulators, and other applications. The SIR826DP-T1-GE3 has a low On-Resistance, a high Input Impedance, and a high Maximum Drain-Source Voltage.

Features

The SIR826DP-T1-GE3 features a single N-Channel MOSFET. It has a low On-Resistance rating of 0.009 ohms, making it suitable for high current/high power applications. The Input Impedance is 45mA, which ensures minimal signal distortion. This is important for detecting a signal accurately. The Maximum Drain-Source Voltage is 30V, which allows higher power handling. Other features include a Maximum Junction Temperature of 125°C and an avalanche energy rating of 41 mJ. This makes it suitable for a wide range of applications, including audio amplifiers, voltage regulators and circuit protection.

Operation

The SIR826DP-T1-GE3 works by applying a voltage across the Drain-Source terminal. When the voltage applied is higher than the Threshold Voltage, the transistor saturates and allows current to flow from the Source to the Drain. This type of transistor is an enhancement mode MOSFET and needs to be activated by an external voltage. The ON Resistance increases with temperature, so it is important to keep the operating temperature within the specified range.

Applications

The SIR826DP-T1-GE3 has a wide range of applications. It is often used in amplifiers, voltage regulators, and circuit protections. It is ideal for high power applications due to its low on-resistance, high input impedance, and high drain-source voltage. It can also be used in applications that require a large current, such as power supplies and LED drivers.

Conclusion

The SIR826DP-T1-GE3 is a high performance and low cost bipolar N-Channel enhancement mode MOSFET. It has a low On-Resistance, high Input Impedance, and high Maximum Drain-Source Voltage. It is an ideal choice for use in applications such as amplifiers, voltage regulators and circuit protection. It is particularly well suited for high-power applications due to its low On-Resistance and high drain-source voltage.

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