SIR800DP-T1-GE3 Discrete Semiconductor Products

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SIR800DP-T1-GE3 Application Field and Working Principle

SIR800DP-T1-GE3 is a type of single-packaged N-channel MOSFET. It is designed and manufactured by Infineon Technologies AG. This MOSFET is suitable for various applications such as Smart Power Switches, Motor Drives, Automotive Electronics, Industrial High Voltage Power Circuits and different Low to Medium Voltage Circuits. It is also appropriate for various types of mobile equipment.

A MOSFET, or metal-oxide-semiconductor field-effect transistor, is a type of voltage-controlled field-effect transistor (FET). It is a digitally operated electronic switch that controls the flow of current easily with the help of an externally applied electric field. A MOSFET acts like an electronically controlled switch and is mainly used in power electronics applications.

MOSFETs in general have three terminals: the gate, the drain and the source. The potential at the gate terminal determines whether the drain and the source are connected such that current flows between them or not. When the gate terminal is owned a low voltage, no current flows between the source and drain of the MOSFET. However, when the gate terminal is applied a high voltage, current flows through the transistor easily.

The SIR800DP-T1-GE3 MOSFET uses N-channel MOSFET technology, which means the conducting channel is created by the negative charges of electrons. It has a drain-source voltage rating of 800V, a continuous drain current of 15A and a maximum avalanche energy of 320mJ. It also has a total gate charge of 10nC and a pinch-off voltage of -1.8V. The manufacturer has also included multiple protection features in the device such as Overvoltage protection, Thermal shutdown and Reverse-current protection.

The SIR800DP-T1-GE3 MOSFET has a wide range of applicability in different medium to high voltage applications such as industrial power circuits, low-to-medium voltage power circuits, automotive electronics and Smart Power switches. One of its features is the low total gate charge, which makes it ideal for switching applications where maximum turn-on and turn-off speed is a priority. It is also appropriate for various types of mobile equipment and motor drives.

In conclusion, the SIR800DP-T1-GE3 is a single-packaged N-channel MOSFET which offers a lot of features for different types of applications. Its low total gate charge and high current carrying capabilities make it an ideal choice for many types of applications. Its high voltage drift and protection features make it suitable for a wide range of applications from medium to high voltage circuits.

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