Allicdata Part #: | SIR820DP-T1-GE3-ND |
Manufacturer Part#: |
SIR820DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 40A POWERPAKSO-8 |
More Detail: | N-Channel 30V 40A (Tc) 37.8W (Tc) Surface Mount Po... |
DataSheet: | SIR820DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 37.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3512pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIR820DP-T1-GE3 is a dual N-channel enhancement mode field effect transistor (FET). It features a low-on-resistance (RDS) and a low-thermal-resistance (Rthj-a). This component is suitable for many power switch applications in a wide range of voltage and current levels. It is suitable for automotive applications, such as in power windows, seat heaters, and power door locks.
The SIR820DP-T1-GE3 can be operated at a voltage range of -55V to 80V and a continuous current range of 10 A with an equivalent on-state resistance of 5.5 mΩ. The component also offers an operating temperature range of -55° C to 150° C. The component is a three-lead device with the source, the drain, and the gate pins. The device features a 14-pin DIP package.
The SIR820DP-T1-GE3 is a power FET based on a high-performance device that is designed to switch efficiently at high frequencies. The device can operate at higher frequencies than a normal FET, allowing more power to be switched in a quicker manner. This makes it especially suitable for switching in applications such as power supplies and motor drives, where high frequency operation is often necessary. The device also offers better performance characteristics than traditional FETs, such as low on-resistance, high dv/dt, and low gate charge.
In addition to its power switching applications, the SIR820DP-T1-GE3 can also be used for general-purpose switching applications and is often used as a replacements for standard Bipolar junction transistors (BJTs). It is commonly used in analog and power circuits, such as DC/DC converters, DC/AC inverters, and as voltage regulators. The device can also be used in low-noise amplifier circuits, due to its low input capacitance. The device is also suitable for use in Class-D amplifiers, as it has extremely low switching losses.
The SIR820DP-T1-GE3 is a dual N-channel MOSFET with enhanced performance. It offers low on-resistance, low on-state voltage drop, and a low-thermal-resistance. The device can handle up to 10A continuous current and operates at frequencies up to 400MHz. It is suitable for both power switching and general purpose switching applications such as regulators, DC/DC converters, and DC/AC inverters. The SIR820DP-T1-GE3 is available in a 14-pin DIP package.
The specific data is subject to PDF, and the above content is for reference
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