Allicdata Part #: | SIR888DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIR888DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 25V 40A PPAK SO-8 |
More Detail: | N-Channel 25V 40A (Tc) 5W (Ta), 48W (Tc) Surface M... |
DataSheet: | SIR888DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.25 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 5065pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 5W (Ta), 48W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
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Transistors are semiconductor devices that control the flow of current between two or more terminals by using the electric field produced by one or more gate electrodes. They are generally classified into two types: Field Effect Transistors (FETs) and Bipolar Junction Transistors (BJTs). FETs are further classified as Single FETs, Dual and Multi FETs.The SIR888DP-T1-GE3 is a single FET from Taiwan Semiconductor. It is a very high density and low gate threshold voltage FET. It is available in surface mount SOT23-5 package and DPAK.The SIR888DP-T1-GE3 is mainly used for power switching applications. It has superior RDS(on) which makes it very suitable for Battery Switching and Load Switching applications. It can also be used for switching in Reverse Battery Protection, DC-DC Converter, Wireless Charger, LCD Backlight Control and DC Motor Control applications.The working principle of FETs is quite simple. A voltage applied to the gate terminal of the device controls the flow of current between the source and drain terminals, allowing current to pass when the gate voltage is at the threshold, and blocking current when the gate voltage is lower than the threshold. This voltage is adjustable, allowing the FET to be highly efficient at controlling the current flow.Because of its low gate threshold voltage, high RDS(on) and low profile, the SIR888DP-T1-GE3 is an ideal device for many applications as already mentioned.The SIR888DP-T1-GE3 has low gate capacitance to minimize its drive power. It has a very low gate charge and low drain charge to achieve low drive power and low power losses. The device also has very high switching frequency allowing the power supply system to be highly efficient and saves energy.Due to its superior performance and low power consumption, the SIR888DP-T1-GE3 is being widely used in many consumer and industrial applications. It is capable of handling high current demands and withstanding shock and vibration. It is also used in automotive, medical and aerospace industries due to its reliability and performance.In conclusion, the SIR888DP-T1-GE3 is a very versatile device with a wide range of applications. It is simple to use, reliable and can be highly efficient in an array of different designs. It is well suited for many consumer, industrial and automotive applications due to its superior performance and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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