SIR804DP-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SIR804DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIR804DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 60A PPAK SO-8 |
More Detail: | N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surf... |
DataSheet: | SIR804DP-T1-GE3 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 6.25W (Ta), 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2450pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 76nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 7.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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In electronic engineering, a SIR804DP-T1-GE3 is a type of field effect transistor (FET) used in a variety of applications. It is a single-channel, insulated gate-bipolar transistor (IGBT) with a robust metal-oxide-semiconductor field effect transistor (MOSFET) structure. This SIR804DP-T1-GE3 has several key features, including an on-resistance of 4.2Ω, an integral gate-source resistor of 27Ω, and an on-resistance temperature coefficient of -72mΩ/°C. In addition, it has a fast switching speed of 6ns, making it ideal for use in high-speed applications.
The SIR804DP-T1-GE3 is primarily used in switching circuits, such as inverters and motor drives, where high voltage and high current load conditions are present. It can also be used in switching mode power supplies, LED lighting, magnetic levitation systems, and robotics. The SIR804DP-T1-GE3 has a maximum operating voltage of 600V, making it suitable for a wide range of applications.
By understanding how the SIR804DP-T1-GE3 works, it is easier to understand why it is so well suited for use in such applications. It is a three-terminal device, with the gate acting as the control element. When a voltage is applied to the gate, this produces a field that modulates the electric current that passes through the device, thus controlling the output voltage. In this way, the SIR804DP-T1-GE3 can be used to provide a regulated output voltage.
The SIR804DP-T1-GE3 is capable of withstanding high switching frequencies, making it ideal for high-performance applications. It is also highly efficient, with an on-resistance rating of 4.2Ω, meaning it consumes less power than other FETs with a similar rating. Moreover, the device is protected against short circuits, overvoltage, and thermal shock, further increasing its reliability.
In addition, the SIR804DP-T1-GE3 is highly reliable, being able to withstand prolonged exposure to high temperatures. It is also resistant to moisture, making it suitable for outdoor applications. Finally, the device is also RoHS compliant, meaning it does not contain hazardous substances.
The SIR804DP-T1-GE3 is an ideal transistor for use in a wide range of applications, ranging from switching circuits to LED lighting and motor drives. Its excellent on-resistance rating, fast switching speed, and reliability make it well suited for high-performance applications. With its robust construction and RoHS compliance, the SIR804DP-T1-GE3 is sure to provide a reliable and efficient performance.
The specific data is subject to PDF, and the above content is for reference
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