Allicdata Part #: | SIR872DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIR872DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 150V 53.7A PPAK SO-8 |
More Detail: | N-Channel 150V 53.7A (Tc) 6.25W (Ta), 104W (Tc) Su... |
DataSheet: | SIR872DP-T1-GE3 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 6.25W (Ta), 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2130pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 53.7A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SIR872DP-T1-GE3 is a N-Channel MOSFET transistor. These types of switches are usually used in power electronics applications, and they are generally used for switching applications. They are also used for controlling the current in inductive loads. This transistor has an extremely low on-resistance which makes it suitable for applications where low switching losses are necessary.
A MOSFET is an acronym for "Metal Oxide Semiconductor Field Effect Transistor". It is a voltage-controlled device, which means that the output current can be controlled by varying the gate-source voltage. MOSFETs are used in many electronic applications such as amplifiers, switch mode power electronics, data converters, and low voltage drivers. Compared to bipolar junction transistors, MOSFETs offer better noise rejection and higher levels of performance.
The SIR872DP-T1-GE3 is a single N-Channel MOSFET which can be used to regulate the current in a variety of applications. Its main features are an extremely low on-resistance, low gate-threshold voltage, and good immunity against ESD. Due to its low on-resistance, it is suitable for applications where low switching losses are needed.
The working principle of an N-Channel MOSFET is similar to a switch. When the voltage on the gate of the transistor is low, it is off and the current does not flow through the transistor. When the voltage on the gate is raised, the transistor switches on and the current flows. Depending on the value of the gate voltage the transistor can be partially on or fully on. The voltage on the gate can also be varied to control the current flowing through the transistor.
The SIR872DP-T1-GE3 is mainly used in applications such as switch mode power supplies, motor control, and motor drivers. It is also used in power connectivity applications, such as cable cutting and isolation systems. The low on-resistance allows for efficient switching, allowing systems to be more power efficient. It also offers low voltage drop, which reduces power losses in power supplies. The low gate drive also ensures that less heat is generated when the transistor is switched on.
The SIR872DP-T1-GE3 is a versatile transistor which can be used in a variety of applications. Its low on-resistance and low gate-threshold voltage make it suitable for switch mode power supplies, motor drivers, and other power electronic applications. The high immunity against ESD makes it suitable for use in environments which may contain high levels of EMI. Its low on-resistance also makes it suitable for applications where low switching losses are required.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SIR840DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V PPAK SO-8... |
SIR888DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 25V 40A PPAK ... |
SIR814DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 60A PPAK ... |
SIR872ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 150V 53.7A PP... |
SIR846DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 60A PPAK... |
SIR838DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 150V 35A PPAK... |
SIR876DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 40A PPAK... |
SIR874DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 25V 20A PPAK ... |
SIR808DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 20A POWER... |
SIR846ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 60A PPAK... |
SIR892DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 50A PPAK ... |
SIR870DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 60A PPAK... |
SIR890DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 50A PPAK ... |
SIR876ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 40A PPAK... |
SIR870ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 60A PPAK... |
SIR882ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 60A PPAK... |
SIR826DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 80V 60A PPAK ... |
SIR804DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 100V 60A PPAK... |
SIR812DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 60A PPAK ... |
SIR844DP-T1-GE3 | Vishay Silic... | 0.56 $ | 1000 | MOSFET N-CH 25V 50A PPAK ... |
SIR818DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A PPAK ... |
SIR862DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 25V 50A PPAK ... |
SIR836DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 21A PPAK ... |
SIR866DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 60A PPAK ... |
SIR864DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 40A PPAK ... |
SIR850DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 30A PPAK ... |
SIR878BDP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 100V POWERP... |
SIR873DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 150V 37A POWE... |
SIR820DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A POWER... |
SIR802DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 20V 30A PPAK ... |
SIR800DP-T1-GE3 | Vishay Silic... | -- | 15000 | MOSFET N-CH 20V 50A PPAK ... |
SIR880ADP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 80V 60A PPAK ... |
SIR882DP-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET N-CH 100V 60A PPAK... |
SIR826ADP-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET N-CH 80V 60A PPAK ... |
SIR880DP-T1-GE3 | Vishay Silic... | -- | 12000 | MOSFET N-CH 80V 60A PPAK ... |
SIR872DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 150V 53.7A PP... |
SIR871DP-T1-GE3 | Vishay Silic... | 0.7 $ | 1000 | MOSFET P-CH 100V 48A POWE... |
SIR826DP-T1-RE3 | Vishay Silic... | 0.77 $ | 1000 | MOSFET N-CH 80V 60A POWER... |
SIR878ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 40A PPAK... |
SIR870ADP-T1-RE3 | Vishay Silic... | 0.79 $ | 1000 | MOSFET N-CH 100V 60A POWE... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...