SIR872DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIR872DP-T1-GE3TR-ND

Manufacturer Part#:

SIR872DP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 150V 53.7A PPAK SO-8
More Detail: N-Channel 150V 53.7A (Tc) 6.25W (Ta), 104W (Tc) Su...
DataSheet: SIR872DP-T1-GE3 datasheetSIR872DP-T1-GE3 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SIR872DP-T1-GE3 is a N-Channel MOSFET transistor. These types of switches are usually used in power electronics applications, and they are generally used for switching applications. They are also used for controlling the current in inductive loads. This transistor has an extremely low on-resistance which makes it suitable for applications where low switching losses are necessary.

A MOSFET is an acronym for "Metal Oxide Semiconductor Field Effect Transistor". It is a voltage-controlled device, which means that the output current can be controlled by varying the gate-source voltage. MOSFETs are used in many electronic applications such as amplifiers, switch mode power electronics, data converters, and low voltage drivers. Compared to bipolar junction transistors, MOSFETs offer better noise rejection and higher levels of performance.

The SIR872DP-T1-GE3 is a single N-Channel MOSFET which can be used to regulate the current in a variety of applications. Its main features are an extremely low on-resistance, low gate-threshold voltage, and good immunity against ESD. Due to its low on-resistance, it is suitable for applications where low switching losses are needed.

The working principle of an N-Channel MOSFET is similar to a switch. When the voltage on the gate of the transistor is low, it is off and the current does not flow through the transistor. When the voltage on the gate is raised, the transistor switches on and the current flows. Depending on the value of the gate voltage the transistor can be partially on or fully on. The voltage on the gate can also be varied to control the current flowing through the transistor.

The SIR872DP-T1-GE3 is mainly used in applications such as switch mode power supplies, motor control, and motor drivers. It is also used in power connectivity applications, such as cable cutting and isolation systems. The low on-resistance allows for efficient switching, allowing systems to be more power efficient. It also offers low voltage drop, which reduces power losses in power supplies. The low gate drive also ensures that less heat is generated when the transistor is switched on.

The SIR872DP-T1-GE3 is a versatile transistor which can be used in a variety of applications. Its low on-resistance and low gate-threshold voltage make it suitable for switch mode power supplies, motor drivers, and other power electronic applications. The high immunity against ESD makes it suitable for use in environments which may contain high levels of EMI. Its low on-resistance also makes it suitable for applications where low switching losses are required.

The specific data is subject to PDF, and the above content is for reference

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