| Allicdata Part #: | SIR846ADP-T1-RE3-ND |
| Manufacturer Part#: |
SIR846ADP-T1-RE3 |
| Price: | $ 0.66 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 100V 60A POWERPAKSO |
| More Detail: | N-Channel 100V 60A (Tc) 83W (Tc) Surface Mount Pow... |
| DataSheet: | SIR846ADP-T1-RE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.59467 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2350pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 7.8 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SIR846ADP-T1-RE3 is a high-performance, MOSFET-based power transistor that is used for a wide range of applications. It is a three-terminal device that includes integrated gate oxide and gate protection circuitry. The SIR846ADP-T1-RE3 is a very popular choice for a variety of consumer, industrial, and automotive applications.
The primary application of the SIR846ADP-T1-RE3 is as a high-current power transistor for powermanagement systems. For example, it can be used to drive high-current loads, such as motors or LEDs. The transistor can also be used as a switch or an amplifier in a wide range of circuit designs. The SIR846ADP-T1-RE3 can handle up to 10A of load current, with a drain-source voltage up to 600V.
The SIR846ADP-T1-RE3 features a reverse-bias protection circuit which provides enhanced fault protection. This circuit monitors the applied drain-source voltage, detecting any reverse-bias conditions and immediately shutting off the transistor. The circuit is designed to react quickly and reliably, helping to protect the circuit from damage due to overvoltage conditions.
The SIR846ADP-T1-RE3 also has an integrated gate-oxide protection circuit which prevents damage to the gate-oxide layer of the transistor. This circuit monitors for overvoltage conditions and shuts off the transistor if the gate-oxide is subjected to too high a voltage. The gate oxide protection circuit ensures that the transistor continues to operate as expected for its specified conditions.
The SIR846ADP-T1-RE3 operates on the principle of insulated gate-field effect transistor (IGFET) technology. This technology is based on the concept of a field-effect transistor (FET) in which the gate electrode is insulated from the source and the drain. The gate electrode is connected to a control voltage that modulates the conductivity of the channel between the source and the drain. As the voltage is increased, the current carrying conductivity of the channel increases and vice versa.
The SIR846ADP-T1-RE3 uses an n-channel IGFET technology to provide high performance. The n-channel IGFET technology allows for a higher current capacity, as well as a greater voltage range than what is possible with their p-channel counterparts. The SIR846ADP-T1-RE3 is a highly reliable switching element and is used in a wide variety of applications where power and control are important.
The SIR846ADP-T1-RE3 is a very popular choice for a broad range of applications, including automotive systems, medical equipment, and emergency lighting. It is also suitable for industrial control, energy management, and telecom systems. Its superior performance and reliability make it one of the most popular high-performance power transistors on the market today.
The specific data is subject to PDF, and the above content is for reference
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SIR846ADP-T1-RE3 Datasheet/PDF