Allicdata Part #: | SIR878ADP-T1-GE3TR-ND |
Manufacturer Part#: |
SIR878ADP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 40A PPAK SO-8 |
More Detail: | N-Channel 100V 40A (Tc) 5W (Ta), 44.5W (Tc) Surfac... |
DataSheet: | SIR878ADP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 44.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1275pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SIR878ADP-T1-GE3 is a high-frequency, high-efficiency transistor with double-gate metal oxide semiconductor (MOSFET). It is designed to operate over wide voltage range and is suitable for various extended temperature ranges. Its advantages include but are not limited to increasing power density and better performance in a wide range of temperature and voltage environment.
The SIR878ADP-T1-GE3, which belongs to the series of n-channel enhancement mode MOSFET transistors, has a wide range of applications. The main features of this family include excellent off-state characteristics and reliable switching performance. This makes it suitable for applications including high-frequency switching, motor control, automotive lighting, power supplies, and power management.
The SIR878ADP-T1-GE3 has excellent switching characteristics and low on-state resistance, and thus it can handle large currents. It also has an impressive high-frequency operation performance. This makes it suitable for use in a wide range of applications including power management, communications, and industrial/automotive applications. Furthermore, as it has an extended temperature range, it can be used for many types of applications, including those in particularly harsh environments.
The working principle of the SIR878ADP-T1-GE3 is simple and straightforward. This double-gate MOSFET has two MOSFETs embedded in a single package. When a voltage is applied to the gate, electrons are injected into the channel between the two MOSFETs. This creates a conductive path, allowing current to flow between the drain and the source of the device. By controlling the voltage applied to the gate, the current that flows between the drain and source can be controlled.
The SIR878ADP-T1-GE3 is a versatile and high-performance transistor. Its wide temperature range and high-efficiency switching performance make it suitable for a variety of applications. Furthermore, its efficiency and reliability make it a cost-efficient choice for many projects. As such, the SIR878ADP-T1-GE3 is an ideal solution for a variety of applications, from high-frequency switching to power management.
The specific data is subject to PDF, and the above content is for reference
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