SIR870DP-T1-GE3

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The SIR870DP-T1-GE3 is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for applications in the low power switching market. The MOSFET is a three terminal voltage controlled device that operates by creating an electric field in a channel between the source and drain terminals of the device in order to control the current flow in the channel. In this MOSFET, the gate terminal acts as a switch which is able to control the current flow between the source and the drain terminals with high efficiency and low input power. This type of MOSFET is especially suited for switching supplies, pulse circuits, inverters and low power logic gate applications.

The SIR870DP-T1-GE3 has a number of key features and characteristics including: a low on-state resistance of 0.76 ohms, an on-state voltage of 8.7V, a rated current of 6A, an operating voltage of 20V, a continuous drain current of 7A, and a gate charge of 7.4nC. In addition, the device has an excellent thermal performance and is pulse capable with a maximum pulse drain current of 36A and a pulse width of 20us. The MOSFET also has a breakdown voltage of 40V and a maximum junction temperature of 150c.

The SIR870DP-T1-GE3 is designed as a three terminal N-channel device able to effectively control the current flow between its source and drain terminals. As a result, the device is able to act as a switch and control the current flow with a high efficiency and low power consumption. The device is able to control the current flow using a combination of an electric field and an applied voltage to the gate terminal.

When a voltage is applied to the gate, an electric field is induced between the source and drain terminals and the total current flowing through the device is determined by this electric field. As the voltage applied to the gate increases, the electric field increases and the current flowing through the device also increases. Similarly, as the voltage applied to the gate decreases, the electric field decreases and the current flowing through the device also decreases.

The SIR870DP-T1-GE3 can be used in a wide range of applications including switching supplies, pulse circuits, low power logic gates, and inverters. The device is especially suited for these applications due to its low on-state resistance, high current capability, high operating voltage and temperature, and excellent thermal performance. The SIR870DP-T1-GE3 is an excellent choice for these types of applications due to its combination of low power consumption and efficient current flow control.

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