Allicdata Part #: | SIR871DP-T1-GE3-ND |
Manufacturer Part#: |
SIR871DP-T1-GE3 |
Price: | $ 0.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 48A POWERPAKSO |
More Detail: | P-Channel 100V 48A (Tc) 89W (Tc) Surface Mount Pow... |
DataSheet: | SIR871DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.63199 |
Vgs(th) (Max) @ Id: | 2.6V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3395pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIR871DP-T1-GE3 is a FET (Field-Effect Transistor) that integrates into various electrical circuits and controls power flow. The device is a single MOSFET (metal-oxide-semiconductor field-effect transistor) that can be used in consumer, industrial, and automotive applications. It is designed for use in low voltage and is compatible with several coppers switch and costal DMOS (double-diffused metal-oxide-semiconductor) devices.
The SIR871DP-T1-GE3 is a vertically-structured MOSFET that is constructed with five layers — an N-type substrate and gate, a wide P-channel, a wide N-channel, and a contact layer. By varying the grain size and length of the gate, the device can be optimized for cost and total power, as well as optimizing switching speed. This device provides protection from output short-circuits, and it tolerates the inverter Parasitic shoot-through.
The SIR871DP-T1-GE3 device has a low ON-resistance and is characterized for low gate charge. The device features a high breakdown voltage and a low gate-to-source threshold voltage — enabling fast switching times. Its built-in thermal protection helps to protect the device against thermal overload conditions.
The working principle is based on the FET structure which allows for an electrical “controlling pin” to alter the current flowing through the device. By applying a voltage to the gate of the device, it can be switched off or on. When the gate is on, current will flow from the drain to the source terminal, allowing power to be supplied through the FET and controlled. When the gate is switched off, the FET will act as an open and no current will flow through the device.
The SIR871DP-T1-GE3 can be used in a wide range of applications, primarily due to its low ON-resistance and high-current switching capability. It can be used in DC/DC converters, load shifting, motor control, and battery management systems. It can also be used in power amplifiers, voltage-controlled oscillators, and other power electronics applications. The device is an optimal choice for automotive applications, due to its low on-resistance and high-current tolerance.
The SIR871DP-T1-GE3 is an excellent choice for a wide range of applications due to its low ON-resistance, high-current tolerance, and fast switching speed. It integrates easily into various electrical circuits and provides unparalleled control for power flow. The device can be used in both consumer and industrial applications, and it is an especially popular choice for automotive applications.
The specific data is subject to PDF, and the above content is for reference
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