SIR871DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIR871DP-T1-GE3-ND

Manufacturer Part#:

SIR871DP-T1-GE3

Price: $ 0.70
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 100V 48A POWERPAKSO
More Detail: P-Channel 100V 48A (Tc) 89W (Tc) Surface Mount Pow...
DataSheet: SIR871DP-T1-GE3 datasheetSIR871DP-T1-GE3 Datasheet/PDF
Quantity: 1000
6000 +: $ 0.63199
Stock 1000Can Ship Immediately
$ 0.7
Specifications
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3395pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIR871DP-T1-GE3 is a FET (Field-Effect Transistor) that integrates into various electrical circuits and controls power flow. The device is a single MOSFET (metal-oxide-semiconductor field-effect transistor) that can be used in consumer, industrial, and automotive applications. It is designed for use in low voltage and is compatible with several coppers switch and costal DMOS (double-diffused metal-oxide-semiconductor) devices.

The SIR871DP-T1-GE3 is a vertically-structured MOSFET that is constructed with five layers — an N-type substrate and gate, a wide P-channel, a wide N-channel, and a contact layer. By varying the grain size and length of the gate, the device can be optimized for cost and total power, as well as optimizing switching speed. This device provides protection from output short-circuits, and it tolerates the inverter Parasitic shoot-through.

The SIR871DP-T1-GE3 device has a low ON-resistance and is characterized for low gate charge. The device features a high breakdown voltage and a low gate-to-source threshold voltage — enabling fast switching times. Its built-in thermal protection helps to protect the device against thermal overload conditions.

The working principle is based on the FET structure which allows for an electrical “controlling pin” to alter the current flowing through the device. By applying a voltage to the gate of the device, it can be switched off or on. When the gate is on, current will flow from the drain to the source terminal, allowing power to be supplied through the FET and controlled. When the gate is switched off, the FET will act as an open and no current will flow through the device.

The SIR871DP-T1-GE3 can be used in a wide range of applications, primarily due to its low ON-resistance and high-current switching capability. It can be used in DC/DC converters, load shifting, motor control, and battery management systems. It can also be used in power amplifiers, voltage-controlled oscillators, and other power electronics applications. The device is an optimal choice for automotive applications, due to its low on-resistance and high-current tolerance.

The SIR871DP-T1-GE3 is an excellent choice for a wide range of applications due to its low ON-resistance, high-current tolerance, and fast switching speed. It integrates easily into various electrical circuits and provides unparalleled control for power flow. The device can be used in both consumer and industrial applications, and it is an especially popular choice for automotive applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SIR8" Included word is 40
Part Number Manufacturer Price Quantity Description
SIR840DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V PPAK SO-8...
SIR888DP-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 25V 40A PPAK ...
SIR814DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 40V 60A PPAK ...
SIR872ADP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 150V 53.7A PP...
SIR846DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 100V 60A PPAK...
SIR838DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 150V 35A PPAK...
SIR876DP-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 40A PPAK...
SIR874DP-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 25V 20A PPAK ...
SIR808DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 25V 20A POWER...
SIR846ADP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 100V 60A PPAK...
SIR892DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 25V 50A PPAK ...
SIR870DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 100V 60A PPAK...
SIR890DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 50A PPAK ...
SIR876ADP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 100V 40A PPAK...
SIR870ADP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 100V 60A PPAK...
SIR882ADP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 100V 60A PPAK...
SIR826DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 80V 60A PPAK ...
SIR804DP-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 100V 60A PPAK...
SIR812DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 60A PPAK ...
SIR844DP-T1-GE3 Vishay Silic... 0.56 $ 1000 MOSFET N-CH 25V 50A PPAK ...
SIR818DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 50A PPAK ...
SIR862DP-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 25V 50A PPAK ...
SIR836DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 40V 21A PPAK ...
SIR866DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 60A PPAK ...
SIR864DP-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 30V 40A PPAK ...
SIR850DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 25V 30A PPAK ...
SIR878BDP-T1-RE3 Vishay Silic... -- 1000 MOSFET N-CHAN 100V POWERP...
SIR873DP-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 150V 37A POWE...
SIR820DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 40A POWER...
SIR802DP-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 20V 30A PPAK ...
SIR800DP-T1-GE3 Vishay Silic... -- 15000 MOSFET N-CH 20V 50A PPAK ...
SIR880ADP-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 80V 60A PPAK ...
SIR882DP-T1-GE3 Vishay Silic... -- 6000 MOSFET N-CH 100V 60A PPAK...
SIR826ADP-T1-GE3 Vishay Silic... -- 6000 MOSFET N-CH 80V 60A PPAK ...
SIR880DP-T1-GE3 Vishay Silic... -- 12000 MOSFET N-CH 80V 60A PPAK ...
SIR872DP-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 150V 53.7A PP...
SIR871DP-T1-GE3 Vishay Silic... 0.7 $ 1000 MOSFET P-CH 100V 48A POWE...
SIR826DP-T1-RE3 Vishay Silic... 0.77 $ 1000 MOSFET N-CH 80V 60A POWER...
SIR878ADP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 100V 40A PPAK...
SIR870ADP-T1-RE3 Vishay Silic... 0.79 $ 1000 MOSFET N-CH 100V 60A POWE...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics