Allicdata Part #: | SIR844DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIR844DP-T1-GE3 |
Price: | $ 0.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 25V 50A PPAK SO-8 |
More Detail: | N-Channel 25V 50A (Tc) 5W (Ta), 50W (Tc) Surface M... |
DataSheet: | SIR844DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.51104 |
Vgs(th) (Max) @ Id: | 2.6V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3215pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIR844DP-T1-GE3 is a monolithic inverter with very low on-state resistance and very fast switching times. As a field-effect transistor (FET), it is most typically used in power applications such as power supplies and motor drives. This article will go over the specifics of the SIR844DP-T1-GE3, discussing its application fields and working principle.
Overview
The SIR844DP-T1-GE3 is an N-channel enhancement-mode MOSFET that operates in an inverter-style configuration. It is an integrated circuit (IC) made from silicon, an insulated gate, and a source and drain region that are connected with a terminal connection. The SIR844DP-T1-GE3 is rated for a maximum voltage of 8 V and a maximum current of 8 amps.
Application Field
The SIR844DP-T1-GE3 is a popular choice for power supply applications due to its low on-state resistance and fast switching times. It can be used in a variety of industries, including industrial, medical, automotive, and consumer electronics. The SIR844DP-T1-GE3 is frequently used in the following types of applications:
- AC voltage conversion and AC to DC power conditioning
- Switched mode power supplies
- Motor drives
Working Principle
The SIR844DP-T1-GE3 works on a principle similar to that of other MOSFETs. It has a source and a drain terminal, with a voltage applied to the gate terminal controlling the flow of current through the device. When the gate voltage is increased from a negative voltage to a positive voltage, the channel will open, allowing current to flow between the source and the drain. When the voltage at the gate drops below the threshold, the channel will be closed, preventing current flow.
The switching behavior of the SIR844DP-T1-GE3 is extremely fast, making it ideal for use in applications that require rapid switching. The device is capable of switching in less than 1 microsecond.
Conclusion
In summary, the SIR844DP-T1-GE3 is an N-channel enhancement-mode MOSFET that is ideal for use in power applications such as power supplies and motor drives. It has a very low on-state resistance and can switch very quickly on the order of 1 microsecond. Its application fields are broad, encompassing industries such as industrial, medical, automotive, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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