SIR836DP-T1-GE3

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The SIR836DP-T1-GE3 is an advanced power MOSFET that enables a wide range of uses in a wide range of applications. Its primary application is in power switching applications, but it can also be implemented in power conversion, RF power amplifiers, automotive body control modules, and other applications that require efficient, high-power switching. It is a n-channel power MOSFET package and has a drain-source voltage up to 82 V and a maximum drain current of 8 A. The device features a low on-resistance, fast switching speed and excellent thermal performance.

The SIR836DP-T1-GE3 works on the MOSFET principle, which utilizes the basic field effect transistor (FET) concept. The FET is composed of source, gate, and drain terminals and a dielectric layer between them. When voltage is applied between the gate and source terminals, electrons, called the majority carriers, flow from the gate to the source. This creates a depletion layer in the semiconductor of the device, which prevents further current flow through the device until the voltage is released.

The SIR836DP-T1-GE3 has a maximum drain to source voltage of 82 V, a maximum drain current of 8 A, and an on resistance of 0.17 Ohms. This makes it an ideal choice for high power switching applications such as power supplies, motor controllers, and body control modules. The device also features a fast switching speed with a turn-on time of just 15 nanoseconds, making it suitable for switching applications. Additionally, the device has an optimized thermal performance with a maximum junction temperature of over 175 °C and maximum power dissipation of 1.3 W.

The device is also found in many other applications such as RF power amplifiers, automotive body control modules, and power conversion circuits. In RF power amplifiers, the SIR836DP-T1-GE3 can be used as a high performance power switch to reduce power dissipation and to reduce switching losses. In automotive body control modules, the device can be used as a switch to control the current flow for automatic lighting and active noise cancellation systems. In power conversion circuits, the device can be used to control the voltage level, which can help improve the efficiency and reliability of the circuit.

The SIR836DP-T1-GE3 is an ideal choice for applications requiring high performance, fast switching, and excellent thermal performance. Its efficient design and low on-resistance make it ideal for power switching applications, RF power amplifiers, automotive body control modules, and power conversion circuits. Its fast switching speed and optimized thermal performance make it an excellent choice for any application that requires efficient, high-power switching.

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