SIRA60DP-T1-RE3 Allicdata Electronics
Allicdata Part #:

SIRA60DP-T1-RE3-ND

Manufacturer Part#:

SIRA60DP-T1-RE3

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 100A POWERPAKSO
More Detail: N-Channel 30V 100A (Tc) 57W (Tc) Surface Mount Pow...
DataSheet: SIRA60DP-T1-RE3 datasheetSIRA60DP-T1-RE3 Datasheet/PDF
Quantity: 1000
6000 +: $ 0.41242
Stock 1000Can Ship Immediately
$ 0.46
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Series: TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs: 0.94 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SIRA60DP-T1-RE3 is a silicon N-channel enhancement mode MOSFET that has been designed for high switching accuracy and superior reliability. It has a very high saturation drain current of up to 60A. This makes it ideal for use in applications such as power switching, low-side switching, and high current gate driving. It is commonly used in high power applications such as automotive, medical, industrial, and consumer electronics.

The working principle of the SIRA60DP-T1-RE3 is fairly straightforward. It is composed of two main components: the transistor and the gate. The gate is connected to a voltage source, which can vary depending on the type of application. When the gate is supplied with a voltage, it creates an electric field, which is then used to control the current flow through the transistor. By manipulating the electric field, it is possible to control the current flow through the transistor, allowing for precision control of power switching.

The SIRA60DP-T1-RE3 is well suited for use in a variety of applications due to its wide range of operating voltage and its good thermal stability. It can be used as a high side switch in applications such as motor control, appliance control, and automotive electronics, as well as in low side switching applications such as LED lighting, power supplies, and audio systems. Its high gate-source voltage rating also makes it suitable for use in gate driving circuits.

Additionally, the SIRA60DP-T1-RE3 is intended to provide a long time reliable performance in applications such as automotive DC-DC converters and motor drives. It has a wide drain-to-source voltage rating of up to 60V which allows for greater reliability and performance. The maximum drain current for this device is also relatively high at 10A, allowing for robust operation in low-side applications.

Overall, the SIRA60DP-T1-RE3 is an excellent choice for use in a wide range of applications. Its high saturation drain current of up to 60A makes it an ideal choice for high power applications such as automotive, medical, industrial, and consumer electronics. Its wide range of operating voltage and its good thermal stability also make it well suited for power switching, low-side switching, and high current gate driving applications. The wide drain-to-source voltage rating and the maximum drain current of 10A make it suitable for reliable operation in low-side applications.

The specific data is subject to PDF, and the above content is for reference

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