SIS402DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIS402DN-T1-GE3TR-ND

Manufacturer Part#:

SIS402DN-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 35A 1212-8
More Detail: N-Channel 30V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface...
DataSheet: SIS402DN-T1-GE3 datasheetSIS402DN-T1-GE3 Datasheet/PDF
Quantity: 161
Stock 161Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 6 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SIS402DN-T1-GE3 (SiS402DN) is a monolithic N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a single gate. As a field effect transistor, it functions as an amplifier, voltage and current regulator, switches, and signal conditioning. It is designed for various application fields that include lighting, industrial controls, communication and aerospace.

The SIS402DN-T1-GE3 is capable of being biased in both enhancement and depletion modes. In enhancement mode, the device is able to switch and amplify low power signals. It is also used as an effective switch and regulator for high voltages and high currents. In depletion mode, the SIS402DN can be used as a voltage drive, current source, and for low noise control. Moreover, the low threshold voltage of the SiS402DN allows for low power operation and is suitable for battery powered applications.

The working principle of the SIS402DN-T1-GE3 involves transistor action when a channel between the drain and the source becomes conductive. This channel is created by the presence of a voltage applied to the gate. When no voltage, or a relatively low voltage is applied to the gate, the drain and source are not conductive and no current will flow. When an appropriate voltage is applied, the channel between the source and the drain becomes conductive, and a current will flow. The SIS402DN allows for an easy and effective way of controlling and manipulating the current flow in a circuit.

The SIS402DN-T1-GE3 can be integrated in various application fields. It is used in control and low noise applications, due to its low threshold voltage. It is also used in lighting systems, in which it is used to switch and amplify signals through high voltages. Moreover, it is used as a switch and regulator in applications that require high currents. Furthermore, the SiS402DN is used in communication and aerospace applications.

In conclusion, the SIS402DN-T1-GE3 is a monolithic N-Channel MOSFET with a single gate. It works by creating a conductive channel between the drain and the source when the appropriate voltage is applied to the gate. It is used in various application fields such as control and low noise applications, lighting systems, communication and aerospace.

The specific data is subject to PDF, and the above content is for reference

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