Allicdata Part #: | SIS402DN-T1-GE3TR-ND |
Manufacturer Part#: |
SIS402DN-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 35A 1212-8 |
More Detail: | N-Channel 30V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface... |
DataSheet: | SIS402DN-T1-GE3 Datasheet/PDF |
Quantity: | 161 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 19A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIS402DN-T1-GE3 (SiS402DN) is a monolithic N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a single gate. As a field effect transistor, it functions as an amplifier, voltage and current regulator, switches, and signal conditioning. It is designed for various application fields that include lighting, industrial controls, communication and aerospace.
The SIS402DN-T1-GE3 is capable of being biased in both enhancement and depletion modes. In enhancement mode, the device is able to switch and amplify low power signals. It is also used as an effective switch and regulator for high voltages and high currents. In depletion mode, the SIS402DN can be used as a voltage drive, current source, and for low noise control. Moreover, the low threshold voltage of the SiS402DN allows for low power operation and is suitable for battery powered applications.
The working principle of the SIS402DN-T1-GE3 involves transistor action when a channel between the drain and the source becomes conductive. This channel is created by the presence of a voltage applied to the gate. When no voltage, or a relatively low voltage is applied to the gate, the drain and source are not conductive and no current will flow. When an appropriate voltage is applied, the channel between the source and the drain becomes conductive, and a current will flow. The SIS402DN allows for an easy and effective way of controlling and manipulating the current flow in a circuit.
The SIS402DN-T1-GE3 can be integrated in various application fields. It is used in control and low noise applications, due to its low threshold voltage. It is also used in lighting systems, in which it is used to switch and amplify signals through high voltages. Moreover, it is used as a switch and regulator in applications that require high currents. Furthermore, the SiS402DN is used in communication and aerospace applications.
In conclusion, the SIS402DN-T1-GE3 is a monolithic N-Channel MOSFET with a single gate. It works by creating a conductive channel between the drain and the source when the appropriate voltage is applied to the gate. It is used in various application fields such as control and low noise applications, lighting systems, communication and aerospace.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SIS426DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 35A 1212-... |
SIS448DN-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 35A 1212-... |
SIS430DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 35A PPAK ... |
SIS447DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 18A POWER... |
SIS488DN-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 40V 40A 1212-... |
SIS429DNT-T1-GE3 | Vishay Silic... | 0.11 $ | 1000 | MOSFET P-CH 30V 20A POWER... |
SIS434DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 35A PPAK ... |
SIS407DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 25A 1212-... |
SIS468DN-T1-GE3 | Vishay Silic... | 0.42 $ | 1000 | MOSFET N-CH 80V 30A 1212-... |
SIS443DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 35A PPAK ... |
SIS452DN-T1-GE3 | Vishay Silic... | 0.42 $ | 1000 | MOSFET N-CH 12V 35A 1212-... |
SIS402DN-T1-GE3 | Vishay Silic... | -- | 161 | MOSFET N-CH 30V 35A 1212-... |
SIS435DNT-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 20V 30A 1212-... |
SIS456DN-T1-GE3 | Vishay Silic... | 0.33 $ | 3000 | MOSFET N-CH 30V 35A PPAK ... |
SIS413DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 18A PPAK ... |
SIS478DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A 1212-... |
SIS415DNT-T1-GE3 | Vishay Silic... | 0.22 $ | 1000 | MOSFET P-CH 20V 35A 1212-... |
SIS406DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 9A 1212-8... |
SIS436DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 16A PPAK ... |
SIS438DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 16A PPAK ... |
SIS454DN-T1-GE3 | Vishay Silic... | 0.33 $ | 1000 | MOSFET N-CH 20V 35A 1212-... |
SIS472DN-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 20A 1212-... |
SIS496EDNT-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A POWER... |
SIS439DNT-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 30V 50A 1212-... |
SIS444DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 35A POWER... |
SIS472ADN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 24A POWER... |
SIS424DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 35A PPAK ... |
SIS412DN-T1-GE3 | Vishay Silic... | -- | 1785 | MOSFET N-CH 30V 12A 1212-... |
SIS410DN-T1-GE3 | Vishay Silic... | -- | 114000 | MOSFET N-CH 20V 35A PPAK ... |
SIS476DN-T1-GE3 | Vishay Silic... | -- | 90000 | MOSFET N-CH 30V 40A 1212-... |
SIS427EDN-T1-GE3 | Vishay Silic... | -- | 21000 | MOSFET P-CH 30V 50A 1212-... |
SIS414DN-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET N-CH 30V 20A 1212-... |
SIS407ADN-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET P-CH 20V 18A 1212-... |
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