SIS438DN-T1-GE3

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Transistors - FETs, MOSFETs - Single

The SIS438DN-T1-GE3 is a modern silicon-oxide-nitride-oxide-silicon (SONOS) type field effect transistor (FET) that is used in advanced integrated circuits for a wide range of applications. The SIS438DN-T1-GE3 is a single-channel enhancement-mode FET that comes in a thin package for thermal and operating efficiency.

Features

The SIS438DN-T1-GE3 FET has some great features, including:

• High-frequency (GHz) operation, making it ideal for RF applications
• Low drain-source on-resistance (R_DS(On)), maximizing current efficiency
• High breakdown voltage (V_BR) for proper device protection
• Cost-effective solution due to its low price point

Applications

The SIS438DN-T1-GE3 is typically used in integrated circuits for its ability to perform at high frequency, and its small size compared to conventional MOSFETs. It is often found in digital circuits such as radio-frequency (RF) applications, such as Wi-Fi routers, satellite receivers, mobile phones, and others. This FET can also be used to drive loads of up to 5A with minimum losses.

Working Principle

The SIS438DN-T1-GE3 is an enhancement-mode MOSFET, meaning it operates in a depletion mode. The operating principle of the FET is based on electric field effect, where an electric field is applied across the drain-source junction to modulate the current flowing through it.

The electric field is created by an applied voltage between the drain and source, which is known as the gate-source voltage (V_GS). When the voltage is applied, it induces an electric field between the source and drain terminals. This field effects the number of charges present at the drain and source terminals, or in other words, forms an electrostatic barrier.

This barrier, known as the inversion layer, is controlled by the gate voltage, and is responsible for the current flowing through the device. In this way, the higher the gate voltage, the more current will flow through the device. This is also known as the drain-source current (I_DS). The drain-source current through the FET is limited by its maximum rating, and so is the power it can deliver.

Conclusion

The SIS438DN-T1-GE3 is a low-cost, high-efficiency single-channel FET that is ideal for a range of integrated circuit applications. Its working principle is based on electric field effect, where an electric field is induced between the source and drain terminals by applying a gate-source voltage. The higher the voltage, the more current will flow through the device. This makes the SIS438DN-T1-GE3 a great choice for circuits needing high frequency operation, superior current efficiency, and high breakdown voltage.

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