SIS472ADN-T1-GE3

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The SIS472ADN-T1-GE3 is a single channel n-channel enhancement mode Vertical Field Effect Transistor (FET) that is commonly used in power switching and amplifier applications. The device is constructed of multiple layers of silicon oxide, thereby forming an insulating gate layer between the gate and the drain. This layer provides the electrical insulation necessary for the transistor to conduct its desired operation.

Due to their low on-resistance capabilities, these FETs are commonly used for applications that require high current conduction. By controlling the gate-source voltage, the current conduction across the source and drain can be adjusted, allowing for highly efficient power management and amplifier control. The SIS472ADN-T1-GE3 in particular has an on-resistance capability of up to 47 ohms, allowing for high current conduction.

The typical operating voltage of the SIS472ADN-T1-GE3 is 10V and its gate threshold voltage is 5 V. This means that the device will turn on when the voltage applied to its gate is greater than 5V and the voltage across its source and drain is greater than 10V. This device also has a Drain-Source On-Resistance of up to 47 ohms. The Drain-Source breakdown voltage of this device is 12V and the maximum Drain-Source Current is 1A.

The SIS472ADN-T1-GE3 is capable of being used in a wide range of applications in power management and linear amplifier circuitry. Due to its low on-resistance, high voltage breakdown capability, and efficient operation, this device is often used in applications that require highly efficient current control and power management, such as motor control and automotive applications. The device is also commonly used in audio amplifiers, cell phone base stations and many other industrial, commercial and consumer applications.

The working principle of the SIS472ADN-T1-GE3 is simple. By adjusting the voltage applied to its gate, the current through its source and drain can be regulated. When the voltage applied to its gate is less than the threshold voltage of 5V, the device is off and no current is conducted. When the voltage applied to its gate is greater than the threshold voltage of 5V, the device is on and current flows from its drain to its source. The amount of current conducted is controlled by adjusting the gate voltage.

In conclusion, the SIS472ADN-T1-GE3 is a single channel n-channel enhancement mode Vertical Field Effect Transistor (FET). It has a low on-resistance capability, is capable of being used in a wide range of applications, and is capable of controlling current through its source and drain. Its working principle is simple, which is to adjust the gate voltage to control the current flow through its source and drain. With its excellent features, the SIS472ADN-T1-GE3 is an ideal choice for applications that require highly efficient power management and amplifier control.

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