Allicdata Part #: | SIS407DN-T1-GE3TR-ND |
Manufacturer Part#: |
SIS407DN-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 25A 1212-8 PPAK |
More Detail: | P-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface... |
DataSheet: | SIS407DN-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 33W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2760pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 93.8nC @ 8V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 15.3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SIS407DN-T1-GE3 is a type of single-junction Field Effect Transistor (FET) device. It is a specialized type of transistor that is designed to regulate or turn on and off the flow of electricity based on applied voltage. The single-junction FET device contains two or more terminals - a gate, a drain, and a source.
A single-junction FET device has an interesting application field in the electronics industry. It is mainly used in power circuits as a switch to regulate current and as a logic device. It is also used to control range of electronic devices such as audio amplifiers and motor controllers.
The SIS407DN-T1-GE3 is specially designed to be able to withstand extreme temperatures. It can be used to regulate the flow of current from -40°C to 150°C. Furthermore, it is a high-voltage FET, making it suitable for AC power control device applications. The device can also handle up to 30V for single-ended applications.
When discussing the working principle of SIS407DN-T1-GE3, one must first understand the effect of an applied voltage on the FET device. Fields Effect Transistors work by creating an electric field between the gate and the channel. When the gate voltage is equal to the drain voltage, a depletion layer is formed, causing current to be blocked between the drain and the source. When the gate voltage is higher than the drain voltage, a depletion layer will form around the channel, reducing its size and allowing current to flow between the drain and the source.
The SIS407DN-T1-GE3 device works by using the principle of threshold voltage. When the gate voltage is lower than the threshold voltage of the device, the channel is completely blocked and current cannot pass through the device. When the gate voltage is higher than the threshold voltage of the device, a channel will be formed around the gate, allowing electrons to flow freely. In this way, the device can be used to control the flow of current by setting the gate voltage.
The SIS407DN-T1-GE3 device is ideal for applications where heat tolerance and high-voltage control is essential. Its ability to control current based on applied voltage makes it very versatile. It is well suited for AC power control applications and can be used in a variety of devices such as audio amplifiers and motor controllers.
The specific data is subject to PDF, and the above content is for reference
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