SIS472DN-T1-GE3

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Introduction

The SIS472DN-T1-GE3 is a single-kinked N-channel, insulated-gate field-effect transistor (IGFET) manufactured by Infineon. It is mainly used for power switching in applications such as motor control, DC to DC power supplies, audio amplifiers, and under voltage lockout circuits. The device is constructed from high-quality materials and is designed to provide superior performance and reliability.

Basic Characteristics

The SIS472DN-T1-GE3 is a Semiconductor Insulated-Gate Field-Effect Transistor (IGFET) with a single-kinked N-channel of 2.0 mm x 2.5 mm. It is manufactured with a P8-layer high-break-down-voltage process. Its drain-source breakdown voltage is between 200V and 500V. It has a maximum drain-source current of 30A, a gate-source voltage of -20V and a drain-source on-resistance of 5.3 mOhms at 10V. It also has an operating temperature range of -55 oC to +150 oC.

Applications

The SIS472DN-T1-GE3 is commonly used as a power switch in a wide range of applications. It is well-suited for motor control circuits, DC to DC power supplies, audio amplifiers and under voltage lockout circuits.

Working Principle

The SIS472DN-T1-GE3 is a single-kinked, N-channel, Insulated Gate Field-Effect Transistor (IGFET). It works based on the principle of a three-electrode MOSFET. It consist of a gate electrode connected to a source terminal, a drain terminal and a substrate. When a voltage is applied to the gate terminal, it creates an electric field, which modulates the surface potential of the substrate, allowing the current to flow through the N-channel of the MOSFET. The current between the source and drain terminals then determines the output characteristics of the device.

Conclusion

The SIS472DN-T1-GE3 is a single-kinked N-channel, insulated-gate field-effect transistor (IGFET) manufactured by Infineon. It is mainly used for power switching in a variety of applications such as motor control, DC to DC power supplies, audio amplifiers and under voltage lockout circuits. It has a maximum drain-source current of 30 Amples and is designed to provide superior performance and reliability.

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