SIS452DN-T1-GE3

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	PowerPAK® 1212-8
Supplier Device Package:	PowerPAK® 1212-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 52W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1700pF @ 6V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	41nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	3.25 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	35A (Tc)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The SIS452DN-T1-GE3 is a single, high-voltage, N-channel MOSFET. It is a low-cost, high-performance power MOSFET that is used in a wide range of applications, including in DC and AC motor drives, industrial automation and machine control, power management, battery power drives, as well as many other power applications. This article will discuss the application fields and working principles of the SIS452DN-T1-GE3 power MOSFET.

Application Fields for the SIS452DN-T1-GE3 MOSFET

The SIS452DN-T1-GE3 is a versatile MOSFET that can be used in a variety of applications. As a high-voltage, low-cost MOSFET, it is a great choice for automotive, industrial, as well as commercial and residential applications. It is an excellent choice for applications in which DC or AC motor drives, industrial automation and machine control, power management, battery power drives, as well as many other power applications are needed. In automotive applications, the SIS452DN-T1-GE3 can be used in the design and construction of DC and AC motor drives, as well as controllers and regulators. It can also be used to power various accessories, such as lights, power windows, and other automotive systems that require a high-performance and reliable power source. In industrial applications, the SIS452DN-T1-GE3 can be used in the design and construction of digital control systems for manufacturing and process automation. It can be used to drive actuators and sensors in robotic assembly processes and in precision motion control systems. It is also a great choice for power regulation in industrial applications. In commercial and residential applications, the SIS452DN-T1-GE3 can be used in the design and construction of white goods, HVAC systems, solar panels, power inverters, and a range of other products. It can provide an efficient, reliable, and cost-effective source of power for these products.

How the SIS452DN-T1-GE3 Works

The SIS452DN-T1-GE3 is a high-voltage, N-channel MOSFET. It is a three-terminal device, meaning that it has source, gate, and drain terminals. The gate terminal is used to control the flow of current through the MOSFET by regulating the voltage applied to it. When the gate voltage is 0V, the MOSFET will be in the off state, meaning that there is no current flowing through it. When the gate voltage is greater than 0V, the MOSFET will be in the on state, meaning that there will be current flowing through it. The current flowing through the MOSFET can be controlled by the voltage applied to the gate terminal. This means that the MOSFET can be used to control the amount of current flowing through it and thus can be used to regulate the amount of power being supplied to a device.

Conclusion

The SIS452DN-T1-GE3 is a single, high-voltage, N-channel MOSFET. It is a versatile and cost-effective MOSFET that can be used in a wide range of applications, including DC and AC motor drives, industrial automation and machine control, power management, battery power drives, and many other power applications. It is a three-terminal device that works by controlling the flow of current through it by regulating the voltage applied to its gate terminal.

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