SIS476DN-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIS476DN-T1-GE3 is an integrated N-channel silicon-oxide-nitride-oxide-silicon (SONOS) metal-oxide-semiconductor field-effect transistor (MOSFET) designed to be used in a wide range of applications requiring low power consumption, no traps, and with low gate-to-channel leakage. This device can be used for a variety of applications, including the switching, rectification, energy storage, and linear-mode circuits.

The SIS476DN-T1-GE3 is a single, low-power N-channel MOSFET which contains a deposited silicon-rich oxide/nitride/oxide/silicon (RSNOS) stack dielectric. This stack dielectric has a built-in charge storage mechanism, which serves as a charge transfer device. As a result, it has a much lower gate-to-channel leakage current than conventional MOSFETs. This is one of the main advantages of this structure.

The SIS476DN-T1-GE3 has a wide variety of application areas, including power conversion, automotive electronics, consumer electronics, telecommunications, and industrial electronics. It can be used in circuits as a switching device, a rectifier, an energy storage element, or in linear-mode circuits. Due to its low power consumption, it is ideal for high-efficiency switching and rectification circuits. It can also be used in low-power circuits, such as motor control and low-noise switching.

The SIS476DN-T1-GE3 is an excellent choice for high speed switching applications and automotive electronic devices. Its MOS technology is extremely efficient and stable and provides excellent temperature stability and power management design. Its low gate-to-channel leakage current and its low on-resistance enable lower on-time losses for more efficient power conversion. Furthermore, its RSNOS structure gives a fast switching speed, making it suitable for high-speed data communications and digital control applications.

The basic design of the SIS476DN-T1-GE3 is based on an N-channel MOSFET with a gate-source junction. The gate is connected to the drain through a channel of semiconductor material, such as silicon or gallium arsenide. This channel serves as the primary conduction path for the MOSFET. When a voltage is applied to the gate, it attracts electrons in the channel and lowers the threshold voltage required for conduction. This results in a lower resistance between the drain and the source and a higher current flow across the drain and source.

In addition to its low power consumption, the SIS476DN-T1-GE3 has several other features. Its temperature range is from -55°C to +125°C, and its maximum operating voltage is 20V. Its maximum drain current is 3A, and its maximum drain-source voltage is 19V. The device has a low gate-charge, and its on-resistance is 2.3 ohms.

The SIS476DN-T1-GE3 is suitable for a wide variety of applications where low power consumption, fast switching speed, low gate-to-channel leakage, and low on-resistance are required. Its features make it an ideal choice for a variety of electronic applications, including power conversion, automotive electronics, consumer electronics, telecommunications, and industrial electronics. With its excellent performance and reliability, the SIS476DN-T1-GE3 is an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference