Allicdata Part #: | SIS415DNT-T1-GE3TR-ND |
Manufacturer Part#: |
SIS415DNT-T1-GE3 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 35A 1212-8 |
More Detail: | P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface... |
DataSheet: | SIS415DNT-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.21011 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5460pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIS415DNT-T1-GE3 is a high-frequency Large Voltage-Gain Fet (LVGFET), which is designed for use in broadband applications. It is made up of one of the advanced semiconductor components. It is suitable for applications such as 5G base stations, passive components and wiring systems. As a LVGFET, it is used for low and medium voltage gain gain and can provide excellent linearity for high-frequency digital transmission applications. It also features good thermal stability and low power losses.
The SIS415DNT-T1-GE3 is manufactured using a unique process so it is different from other devices in its class. Its unique design and performance has led to applications in fields such as broadband communications, automotive and military uses. The device has been tested and certified to pass rigorous test requirements for use in all kinds of applications.
This device is designed to provide a high voltage gain over a wide frequency range. It utilises a high gain dielectric material and an optimised optoelectronic structure to achieve the highest level of linearity. It also has excellent noise rejection capability and low power losses. Its primary use is to improve the power transfer efficiency for high-frequency digital transmission.
The SIS415DNT-T1-GE3 has a wide range of operating conditions and is capable of operating over a wide range of temperatures, up to a maximum temperature of +175°C. It also features a low input capacitance which makes it suitable for use in high-frequency circuit applications. Additionally, it has a low input resistance which makes it ideal for use in power supply circuits.
The working principle of the SIS415DNT-T1-GE3 is very simple. The device is designed to amplify an input signal by a set voltage gain. By controlling the voltage applied to the gate of the device, the gain is adjusted accordingly. The device then amplifies the input signal, which is then converted into an output signal at the other end of the device.
This device is used in a variety of different applications, from consumer electronics and performance audio to communication systems and satellite reception. In consumer applications, it can be used for RF amplifiers, for cellular phone and wireless communication systems. In performance audio, it can be used for loudspeakers, and in satellite reception, it can be used for antennas and directional antennas.
The SIS415DNT-T1-GE3 is a versatile device that can be used for a variety of applications. It is the perfect choice for applications where high performance, reliability and efficiency are important considerations. Its robust construction and reliable performance make it an ideal choice for a variety of applications. Whether it is used in consumer electronics or communications systems, the SIS415DNT-T1-GE3 is an excellent choice for any application.
The specific data is subject to PDF, and the above content is for reference
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