SIS426DN-T1-GE3

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SIS426DN-T1-GE3 is a PMOS field effect transistor (FET) that is suitable for switching and low noise amplifier applications. It is a single-channel N-channel MOSFET, which makes it ideal for use in a wide range of applications.

The SIS426DN-T1-GE3 has a threshold voltage of -2.5 V and a breakdown voltage of -60 V. It has low on-resistance of 10 ohms and can handle up to 1.0 A continuous drain current. The total gate capacitance is 16 pf and the total gate-source capacitance is 5.2 pf.

The main advantage of this FET is its low threshold voltage and low on-resistance, which allows for excellent performance when switching from low to high loads. The low capacitances also allow for fast switching times and low noise operation.

The main application field of the SIS426DN -T1-GE3 is in switching and low noise amplifiers, and it is suitable for a wide range of applications such as in the automotive, industrial, medical, and military sectors. It is also suitable for switching applications in power supplies, display interfaces, peripherals, and system control.

The working principle of the SIS426DN-T1-GE3 is similar to other field effect transistors (FETs). Its gate voltage controls the resistive channel that is formed between the source and drain. When the gate voltage reaches the threshold voltage, the channel begins to conduct and current can flow from the source to the drain.

The SIS426DN-T1-GE3 is a very versatile and reliable FET that is suitable for a wide range of applications. It has low on-resistance and excellent performance when executing from low to high loads. It is also suitable for use in switching and low noise amplifiers, making it an ideal choice for various fields such as automotive, industrial, medical, and military.

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