Allicdata Part #: | SIS478DN-T1-GE3TR-ND |
Manufacturer Part#: |
SIS478DN-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 12A 1212-8 |
More Detail: | N-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surfa... |
DataSheet: | SIS478DN-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 15.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 398pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SIS478DN-T1-GE3 is a single field-effect transistor (FET), specifically a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This type of transistor controls data and/or power in a wide range of applications, such as analog and digital circuit operation. It has a switching capability and can handle a large current and voltage when activated.
This particular FET has been designed to be used in many different kinds of applications, such as power management, signal conditioning, and in data communications. It is particularly well-suited for use in areas where high power and exact performance are required. It is particularly useful in those areas where precise, controlled, and clean power is needed.
The technology used in the SIS478DN-T1-GE3 is known as Complementary Metal Oxide Semiconductor (CMOS). CMOS technology is very versatile and comes in many different flavors, ranging from analog to digital. In the case of the SIS478DN-T1-GE3, the transistor is uniquely suited for use in applications that require a combination of both analog and digital capabilities.
At its most basic, the SIS478DN-T1-GE3 is a low-voltage, single-gated field-effect transistor (FET); however, its use can become quite complex. In most applications, the SIS478DN-T1-GE3 functions as an n-channel or p-channel FET. The primary difference between the two is in the type of gate used. In a single-gate FET, there is only a single gate, which is used to provide the control voltage for the transistor.
An N-channel FET has a gate that is turned on when the voltage applied to the gate is high. This type of transistor is used to switch on current or power, depending on the voltage applied. A P-channel FET has a gate that is turned on when the voltage applied to the gate is low. This type of transistor is used to switch off current or power, depending on the voltage applied.
The SIS478DN-T1-GE3 has an applications-specific integrated circuit (ASIC) design, which means that it has specific transistors and other components that are designed to provide the best performance possible. It is designed to be used in applications that require high switching speeds and precise control, as well as in those applications that are sensitive to noise or power surges.
The technology used in the SIS478DN-T1-GE3 transistor is very advanced, and it is used to increase the performance and accuracy of many advanced designs. It typically operates at a low frequency, typically less than 1 GHz, and is used in applications that require high levels of accuracy and reliability. Its low gate-to-source capacitance also allows for operation with extremely low on-resistance and fast transitions.
In summary, the SIS478DN-T1-GE3 provides a unique solution for many different applications. It is designed to provide high levels of performance and accuracy, while still maintaining a compact size and low power consumption. Its compatibility with a wide range of technologies allows it to be used in a variety of applications where it is needed.
The specific data is subject to PDF, and the above content is for reference
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