SIS435DNT-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SIS435DNT-T1-GE3TR-ND |
Manufacturer Part#: |
SIS435DNT-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 30A 1212-8 |
More Detail: | P-Channel 20V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface... |
DataSheet: | SIS435DNT-T1-GE3 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 39W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5700pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 8V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 5.4 mOhm @ 13A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SIS435DNT-T1-GE3 is a type of MOSFET (metal–oxide–semiconductor field-effect transistor) that has a single gate design and is powered by a negative voltage. The unique characteristics of this type of transistor make it useful for a variety of applications, including power conversion, controller, diode, and amplifier.
The working principle of a MOSFET is based on the principle of electron charge transfer. When an electric field is applied to a P type semiconductor, an electron-rich region, or channel, is created. This channel allows electrons to flow between the source and the drain. As the field is increased, the channel begins to conduct current. When the voltage on the gate is increased, the current through the channel is also increased. By controlling the voltage on the gate, the amount of current flowing through the channel can be adjusted, allowing precise control of power.
A SIS435DNT-T1-GE3 offers several advantages over other types of MOSFETs. The single gate design reduces the required gate drive, which simplifies circuit layout and reduces cost. Since the gate voltage is isolated from the power source, the power source does not need to be stabilized to avoid triggering the negative gate voltage. This makes the SIS435DNT-T1-GE3 an ideal choice for use in high-voltage applications where other types of MOSFETs may not be suitable.
This type of MOSFET is used in a variety of applications including motor control, audio amplifiers, microcontroller power supplies, and power conversion. In motor control applications, the SIS435DNT-T1-GE3 can be used to control the amount of current flowing through a motor, which allows precise speed control and also provides overload protection. In audio amplifiers, a SIS435DNT-T1-GE3 can be used to regulate the amount of power flowing through the speaker, providing higher sound quality. This type of transistor can also be used in microcontroller power supplies to provide noise filtering and power stabilization. Finally, SIS435DNT-T1-GE3 transistors can be used in power conversion applications to convert different voltages and currents.
SIS435DNT-T1-GE3 transistors offer a unique combination of characteristics that make them suitable for a wide range of applications. The single gate design makes circuit layout easier and cost less, while the negative gate voltage provides power stabilization and allows the use of high voltages. The ability to precisely control the amount of current that flows through the channel makes it an ideal choice for motor control, audio amplifiers, microcontroller power supplies, and power conversion.
The specific data is subject to PDF, and the above content is for reference
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SIS426DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 35A 1212-... |
SIS448DN-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 35A 1212-... |
SIS430DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 35A PPAK ... |
SIS447DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 18A POWER... |
SIS488DN-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 40V 40A 1212-... |
SIS429DNT-T1-GE3 | Vishay Silic... | 0.11 $ | 1000 | MOSFET P-CH 30V 20A POWER... |
SIS434DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 35A PPAK ... |
SIS407DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 25A 1212-... |
SIS468DN-T1-GE3 | Vishay Silic... | 0.42 $ | 1000 | MOSFET N-CH 80V 30A 1212-... |
SIS443DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 35A PPAK ... |
SIS452DN-T1-GE3 | Vishay Silic... | 0.42 $ | 1000 | MOSFET N-CH 12V 35A 1212-... |
SIS402DN-T1-GE3 | Vishay Silic... | -- | 161 | MOSFET N-CH 30V 35A 1212-... |
SIS435DNT-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 20V 30A 1212-... |
SIS456DN-T1-GE3 | Vishay Silic... | 0.33 $ | 3000 | MOSFET N-CH 30V 35A PPAK ... |
SIS413DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 18A PPAK ... |
SIS478DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A 1212-... |
SIS415DNT-T1-GE3 | Vishay Silic... | 0.22 $ | 1000 | MOSFET P-CH 20V 35A 1212-... |
SIS406DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 9A 1212-8... |
SIS436DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 16A PPAK ... |
SIS438DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 16A PPAK ... |
SIS454DN-T1-GE3 | Vishay Silic... | 0.33 $ | 1000 | MOSFET N-CH 20V 35A 1212-... |
SIS472DN-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 20A 1212-... |
SIS496EDNT-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A POWER... |
SIS439DNT-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 30V 50A 1212-... |
SIS444DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 35A POWER... |
SIS472ADN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 24A POWER... |
SIS424DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 35A PPAK ... |
SIS412DN-T1-GE3 | Vishay Silic... | -- | 1785 | MOSFET N-CH 30V 12A 1212-... |
SIS410DN-T1-GE3 | Vishay Silic... | -- | 114000 | MOSFET N-CH 20V 35A PPAK ... |
SIS476DN-T1-GE3 | Vishay Silic... | -- | 90000 | MOSFET N-CH 30V 40A 1212-... |
SIS427EDN-T1-GE3 | Vishay Silic... | -- | 21000 | MOSFET P-CH 30V 50A 1212-... |
SIS414DN-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET N-CH 30V 20A 1212-... |
SIS407ADN-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET P-CH 20V 18A 1212-... |
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