SIS435DNT-T1-GE3 Allicdata Electronics

SIS435DNT-T1-GE3 Discrete Semiconductor Products

Allicdata Part #:

SIS435DNT-T1-GE3TR-ND

Manufacturer Part#:

SIS435DNT-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 30A 1212-8
More Detail: P-Channel 20V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface...
DataSheet: SIS435DNT-T1-GE3 datasheetSIS435DNT-T1-GE3 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 900mV @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 8V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 13A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SIS435DNT-T1-GE3 is a type of MOSFET (metal–oxide–semiconductor field-effect transistor) that has a single gate design and is powered by a negative voltage. The unique characteristics of this type of transistor make it useful for a variety of applications, including power conversion, controller, diode, and amplifier.

The working principle of a MOSFET is based on the principle of electron charge transfer. When an electric field is applied to a P type semiconductor, an electron-rich region, or channel, is created. This channel allows electrons to flow between the source and the drain. As the field is increased, the channel begins to conduct current. When the voltage on the gate is increased, the current through the channel is also increased. By controlling the voltage on the gate, the amount of current flowing through the channel can be adjusted, allowing precise control of power.

A SIS435DNT-T1-GE3 offers several advantages over other types of MOSFETs. The single gate design reduces the required gate drive, which simplifies circuit layout and reduces cost. Since the gate voltage is isolated from the power source, the power source does not need to be stabilized to avoid triggering the negative gate voltage. This makes the SIS435DNT-T1-GE3 an ideal choice for use in high-voltage applications where other types of MOSFETs may not be suitable.

This type of MOSFET is used in a variety of applications including motor control, audio amplifiers, microcontroller power supplies, and power conversion. In motor control applications, the SIS435DNT-T1-GE3 can be used to control the amount of current flowing through a motor, which allows precise speed control and also provides overload protection. In audio amplifiers, a SIS435DNT-T1-GE3 can be used to regulate the amount of power flowing through the speaker, providing higher sound quality. This type of transistor can also be used in microcontroller power supplies to provide noise filtering and power stabilization. Finally, SIS435DNT-T1-GE3 transistors can be used in power conversion applications to convert different voltages and currents.

SIS435DNT-T1-GE3 transistors offer a unique combination of characteristics that make them suitable for a wide range of applications. The single gate design makes circuit layout easier and cost less, while the negative gate voltage provides power stabilization and allows the use of high voltages. The ability to precisely control the amount of current that flows through the channel makes it an ideal choice for motor control, audio amplifiers, microcontroller power supplies, and power conversion.

The specific data is subject to PDF, and the above content is for reference

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