SIS413DN-T1-GE3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	PowerPAK® 1212-8
Supplier Device Package:	PowerPAK® 1212-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 52W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4280pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	9.4 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	18A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SIS413DN-T1-GE3 is a high-performance, low-power field-effect transistor (FET) transistor. It is a single-pole, dual-gate MOSFET with two independently-controlled gates. Manufactured by Toshiba, the SIS413DN-T1-GE3 is a popular choice for many RF applications, including amplifiers and mixers.The SIS413DN-T1-GE3 is a remarkable transistor with impressive features, such as a low-power consumption, a wide frequency range, a low-voltage operation, and a high-power dissipation. It has a high accuracy operational gain and a wide dynamic range, making it an ideal choice for various kinds of switching and signal processing applications.The SIS413DN-T1-GE3’s gate-source capacitance is a surprisingly low 4 pF (picofarad). This is an important consideration for RF applications, as it facilitates the low-power consumption and reliable operation of the device. It also contributes to the device’s wide frequency range, which allows it to receive, amplify, and modulate signals from various kinds of frequencies.The device’s high-power dissipation is an important feature for RF applications as well. High-power dissipation ensures the device can withstand powerful signals, while minimising power loss. This ensures reliable performance in the form of superior gain and output linearity.The SIS413DN-T1-GE3 can also operate at very low voltages, making it ideal for applications where battery power is limited. The low-voltage operation and power saving capabilities of the device allow it to contribute to energy savings, reduced maintenance costs, and longer operation time for the system.In terms of its actual working principle, the SIS413DN-T1-GE3 is essentially a metal-oxide field-effect transistor. It acts as a voltage-controlled current switch and is capable of amplifying weak signals, such as those coming from antennas, mixers, and amplifiers. The transistor works by controlling the flow of current between two conduction channels, or ‘gates’.When the voltage applied to the gates differs, the channel between the gates will close and thus the flow of the current is stopped. When the two gates have the same voltage applied to them, the channel is opened, allowing current to flow through. So, in essence, the SIS413DN-T1-GE3 allows a user to control the amount of current that flows through the device.Given its impressive features and capabilities, the SIS413DN-T1-GE3 is an ideal choice for many applications. It is typically used for applications such as amplifiers, mixers, and adjustable oscillators. It is also used for switching, signal processing, and controlling current in various kinds of circuits.All in all, the SIS413DN-T1-GE3 is an impressive transistor that is capable of helping to reduce power consumption and optimize performance in a variety of applications. Its low-power consumption, wide frequency range, low-voltage operation, and high-power dissipation are just some of its many advantages, making it a popular choice for many RF applications.

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