| Allicdata Part #: | SIS454DN-T1-GE3TR-ND |
| Manufacturer Part#: |
SIS454DN-T1-GE3 |
| Price: | $ 0.33 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 20V 35A 1212-8 PPAK |
| More Detail: | N-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface... |
| DataSheet: |  SIS454DN-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.29415 |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Package / Case: | PowerPAK® 1212-8 |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 52W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SIS454DN-T1-GE3 is an semiconductor device that operates on a Field Effect Transistor (FET) platform. It is also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a single N-channel devices that is used in many applications such as switching, amplifier, and logic circuits.
The SIS454DN-T1-GE3 is a Voltage-mode device, which means the voltage given to the Gate (VG) is larger than the threshold voltage of the device. This allows the Gate control the flow of current through the SIS454DN-T1-GE3.
The working principle of the SIS454DN-T1-GE3 is relatively simple. When the voltage given to the Gate of the device is higher than the threshold voltage, it will turn the device ‘on’ which allows current to flow through. When the Gate voltage is lower than the threshold voltage, the device will turn ‘off’ and no current can flow through it.
The SIS454DN-T1-GE3 is used in various application fields such as power supply, motor control, display backlighting, and amplifier circuits. It is widely used in products such as switching power supplies, amplifiers, and DC motor control.
In order to use the SIS454DN-T1-GE3 effectively, it is important to know the specifications of the device. The SIS454DN-T1-GE3 has a maximum drain-source voltage of 400V, a 12V gate-source voltage, drain current of 454A, and a drain-source saturation voltage of 0.14V. It also has a switching frequency of 25Khz and a total gate charge of 1.6nC.
The SIS454DN-T1-GE3 is a reliable device with a long lifespan. It can work continuously for millions of switching cycles, so it is suitable for use in many applications. It is also relatively easy to use, which makes it a popular choice for many designers.
In conclusion, the SIS454DN-T1-GE3 is a single N-Channel FET device that has a wide range of uses. It has a reliable performance and can work continuously for millions of switching cycles. It is an ideal choice for applications such as power supply, motor control, and display backlighting.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SIS426DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 35A 1212-... |
| SIS448DN-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 35A 1212-... |
| SIS430DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 35A PPAK ... |
| SIS447DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 18A POWER... |
| SIS488DN-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 40V 40A 1212-... |
| SIS429DNT-T1-GE3 | Vishay Silic... | 0.11 $ | 1000 | MOSFET P-CH 30V 20A POWER... |
| SIS434DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 35A PPAK ... |
| SIS407DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 25A 1212-... |
| SIS468DN-T1-GE3 | Vishay Silic... | 0.42 $ | 1000 | MOSFET N-CH 80V 30A 1212-... |
| SIS443DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 35A PPAK ... |
| SIS452DN-T1-GE3 | Vishay Silic... | 0.42 $ | 1000 | MOSFET N-CH 12V 35A 1212-... |
| SIS402DN-T1-GE3 | Vishay Silic... | -- | 161 | MOSFET N-CH 30V 35A 1212-... |
| SIS435DNT-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 20V 30A 1212-... |
| SIS456DN-T1-GE3 | Vishay Silic... | 0.33 $ | 3000 | MOSFET N-CH 30V 35A PPAK ... |
| SIS413DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 18A PPAK ... |
| SIS478DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A 1212-... |
| SIS415DNT-T1-GE3 | Vishay Silic... | 0.22 $ | 1000 | MOSFET P-CH 20V 35A 1212-... |
| SIS406DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 9A 1212-8... |
| SIS436DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 16A PPAK ... |
| SIS438DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 16A PPAK ... |
| SIS454DN-T1-GE3 | Vishay Silic... | 0.33 $ | 1000 | MOSFET N-CH 20V 35A 1212-... |
| SIS472DN-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 20A 1212-... |
| SIS496EDNT-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A POWER... |
| SIS439DNT-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 30V 50A 1212-... |
| SIS444DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 35A POWER... |
| SIS472ADN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 24A POWER... |
| SIS424DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 35A PPAK ... |
| SIS412DN-T1-GE3 | Vishay Silic... | -- | 1785 | MOSFET N-CH 30V 12A 1212-... |
| SIS410DN-T1-GE3 | Vishay Silic... | -- | 114000 | MOSFET N-CH 20V 35A PPAK ... |
| SIS476DN-T1-GE3 | Vishay Silic... | -- | 90000 | MOSFET N-CH 30V 40A 1212-... |
| SIS427EDN-T1-GE3 | Vishay Silic... | -- | 21000 | MOSFET P-CH 30V 50A 1212-... |
| SIS414DN-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET N-CH 30V 20A 1212-... |
| SIS407ADN-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET P-CH 20V 18A 1212-... |
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